A study of electron transition in the energy gap of SI-GaAs with photoconductivity spectra and under alpha-particle irradiation

The aim of the present work is to study the density of electron transitions inside the energy gap of SI-GaAs at various temperatures and under @a-particle irradiation at 300K. The photocurrent as a function of photon energy from 1.35 to 1.80eV, for each temperature, was measured in the temperature range from 180 to 300K. From the spectra analysis for each temperature, three peaks were found. The energy that corresponds to the peaks as a function of temperature was plotted. The temperature and the irradiation strongly affect the value of the peaks, which is related to the number of transitions of the electrons inside the energy gap. As the temperature decreases, the peaks follow the same change. After irradiation, the values of the peaks decrease for all temperatures and this decrease is more intense for the P3 peak.