论文信息 - Ultrathin Si capping layer suppresses charge trapping in HfOxNy∕Ge metal-insulator-semiconductor capacitors - 字舞流文

Ultrathin Si capping layer suppresses charge trapping in HfOxNy∕Ge metal-insulator-semiconductor capacitors

Chun-Yen Chang | G. Luo | C. Chien | Chao-Ching Cheng | Je-Hung Lin | Chun-Hui Yang | M. Kuo