Effects of Energy-Deposition Variability on Soft Error Rate Prediction

Variability in energy deposition caused by intrinsic statistical fluctuations is quantified for specific radiation environments. Differences in effective flux are observed for minimally ionizing particles, typically leading to a decrease in predicted soft error rate, the magnitude of which depends on the threshold LET. When compared to spectra accounting for energy-deposition fluctuations, predictions with traditional LET spectra in CREME96 are found to lead to conservative estimates in almost all situations.

[1]  S. Incerti,et al.  Geant4 developments and applications , 2006, IEEE Transactions on Nuclear Science.

[2]  R. Reed,et al.  Effects of Metal Gates and Back-End-of-Line Materials on X-Ray Dose in ${\rm HfO}_{2}$ Gate Oxide , 2011, IEEE Transactions on Nuclear Science.

[3]  J. C. Pickel,et al.  Rate prediction for single event effects-a critique , 1992 .

[4]  P. V. Vavilov.  IONIZATION LOSSES OF HIGH-ENERGY HEAVY PARTICLES , 1957 .

[5]  James H. Adams,et al.  Single event upsets caused by solar energetic heavy ions , 1996 .

[6]  W. Heinrich,et al.  Calculation of LET-spectra of heavy cosmic ray nuclei at various absorber depths. , 1977 .

[7]  Lev Davidovich Landau,et al.  On the energy loss of fast particles by ionization , 1944 .

[8]  J. F. Ziegler,et al.  Stopping and Range of Ions in Matter SRIM-2003 , 2003 .

[9]  Experimental Evidence of Large Dispersion of Deposited Energy in Thin Active Layer Devices , 2011, IEEE Transactions on Nuclear Science.

[10]  peixiong zhao,et al.  Impact of Low-Energy Proton Induced Upsets on Test Methods and Rate Predictions , 2009, IEEE Transactions on Nuclear Science.

[11]  R. Koga,et al.  Comparative SEU sensitivities to relativistic heavy ions , 1998 .

[12]  peixiong zhao,et al.  Muon-Induced Single Event Upsets in Deep-Submicron Technology , 2010, IEEE Transactions on Nuclear Science.

[13]  W. Heinrich.  Calculation of LET-spectra of heavy cosmic ray nuclei at various absorber depths , 1977 .

[14]  Hans Bichsel,et al.  A method to improve tracking and particle identification in TPCs and silicon detectors , 2006 .

[15]  R.A. Reed,et al.  General Framework for Single Event Effects Rate Prediction in Microelectronics , 2009, IEEE Transactions on Nuclear Science.

[16]  J.W. Howard,et al.  Role of heavy-ion nuclear reactions in determining on-orbit single event error rates , 2005, IEEE Transactions on Nuclear Science.

[17]  D. McMorrow,et al.  The contribution of nuclear reactions to heavy ion single event upset cross-section measurements in a high-density SEU hardened SRAM , 2005, IEEE Transactions on Nuclear Science.

[18]  Robert C. Baumann,et al.  Contribution of low-energy (≪ 10 MeV) neutrons to upset rate in a 65 nm SRAM , 2010, 2010 IEEE International Reliability Physics Symposium.

[19]  H. Saito,et al.  Heavy Ion Energy Effects in CMOS SRAMs , 2007, IEEE Transactions on Nuclear Science.

[20]  M. Mendenhall,et al.  A screened Coulomb scattering module for displacement damage computations in Geant4 , 2004, IEEE Transactions on Nuclear Science.

[21]  peixiong zhao,et al.  Monte Carlo Simulation of Single Event Effects , 2010, IEEE Transactions on Nuclear Science.

[22]  M. Xapsos.  Applicability of LET to single events in microelectronic structures , 1992 .

[23]  peixiong zhao,et al.  Impact of Ion Energy and Species on Single Event Effects Analysis , 2007, IEEE Transactions on Nuclear Science.

[24]  peixiong zhao,et al.  Implications of Nuclear Reactions for Single Event Effects Test Methods and Analysis , 2006, IEEE Transactions on Nuclear Science.

[25]  S. Buchner,et al.  Rate predictions for single-event effects - critique II , 2005, IEEE Transactions on Nuclear Science.