Total Dose and Transient Response of SiGe HBTs from a New 4th-Generation, 90 nm SiGe BiCMOS Technology
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D. Harame | T. D. England | J. D. Cressler | J. Adkisson | P. Gray | M. Khater | V. Jain | B. Zetterlund | A. Vallett | P. Cheng | R. L. Schmid | V. Kaushal | S. D. Phillips | J. Pekarik | K. A. Moen | R. Camillo-Castillo | Q. Liu | N. E. Lourenco | J. E. Monaghan
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