Gate drive considerations for IGBT modules

The switching performance of an insulated gate bipolar transistor (IGBT) module depends on the drive circuit characteristics and external DC loop inductance. The authors discuss the influence of these parameters on switching losses, diode recovery, switching voltage transients, short-circuit operation, and d nu /dt induced current. The present work is tutorial and identifies trends. It is intended to help the circuit designer to apply the IGBT module to best advantage.<<ETX>>

[1]  K. Gauen,et al.  The effects of MOSFET output capacitance in high frequency applications , 1989, Conference Record of the IEEE Industry Applications Society Annual Meeting,.

[2]  G. Castino.  Protecting IGBTs Against Short Circuit , 1991 .

[3]  S.K. Biswas,et al.  A modular gate drive circuit for insulated gate bipolar transistors , 1991, Conference Record of the 1991 IEEE Industry Applications Society Annual Meeting.