High-speed and highly reliable InP/InGaAs avalanche photodiode for optical communications

We present a review of the characteristics of several different types of high speed InGaAs/InP avalanche photodiode (APD)s that we have developed for different guard ring depth and for different main p-n junction shape. The APD structure that we propose consists of a greatly reduced width in InP multiplication layer and a high doping concentrated electric field buffer layer, where we also adopted a floating guard ring and a shaped main junction with recess etching for a reliable operation of an APD. We obtained high reliability APDs, which are tested for two-dimensional gain behavior and for accelerated life tests by monitoring dark current and breakdown voltage. The gain and bandwidth product of the best of our APDs was measured as high as 80 GHz.

[1]  Won-Tien Tsang,et al.  Delta-Doped Sagm-Avalanche Photodiodes , 1991, [1991] 49th Annual Device Research Conference Digest.

[2]  Ilgu Yun,et al.  Reliability of planar InP-InGaAs avalanche photodiodes with recess etching , 2002 .

[3]  J.C. Campbell,et al.  Impact ionization characteristics of III-V semiconductors for a wide range of multiplication region thicknesses , 2000, IEEE Journal of Quantum Electronics.

[4]  Y. Liu,et al.  In/sub 0.53/Ga/sub 0.47/As/InP floating guard ring avalanche photodiodes fabricated by double diffusion , 1990, IEEE Photonics Technology Letters.

[5]  Michael J. Lange,et al.  A planar InP/InGaAs avalanche photodiode with floating guard ring and double diffused junction , 1992 .

[6]  D. G. Knight,et al.  Planar InP/InGaAs avalanche photodetectors with partial charge sheet in device periphery , 1990 .

[7]  J.C. Campbell,et al.  High-speed quantum-dot resonant-cavity SACM avalanche photodiodes operating at 1.06 /spl mu/m , 1999, 1999 Digest of the LEOS Summer Topical Meetings: Nanostructures and Quantum Dots/WDM Components/VCSELs and Microcavaties/RF Photonics for CATV and HFC Systems (Cat. No.99TH8455).

[8]  Bahaa E. A. Saleh,et al.  Gain-bandwidth characteristics of thin avalanche photodiodes , 2002 .

[9]  Kyung-Sook Hyun,et al.  Breakdown characteristics in InP/InGaAs avalanche photodiode with p-i-n multiplication layer structure , 1997 .

[10]  Joe C. Campbell,et al.  Performance of thin separate absorption, charge, and multiplication avalanche photodiodes , 1998 .

[11]  S. Sugou,et al.  High-speed and low-dark-current flip-chip InAlAs/InAlGaAs quaternary well superlattice APDs with 120 GHz gain-bandwidth product , 1993, IEEE Photonics Technology Letters.

[12]  Kyung-Sook Hyun,et al.  Effect of multiplication layer width on breakdown voltage in InP/InGaAs avalanche photodiode , 1995 .