Interdiffused quantum nanostructure for photonics integration

The effect of quantum nanostructure interdiffusion or intermixing using impurity free vacancy diffusion (IFVD) and impurity induced disordering (IID) techniques, on the various types of GaAs- and InP-based quantum-well (QW) and quantum-dot (QD) structures for postgrowth photonic device integration is presented Using IFVD, we have demonstrated the fabrication of photonic integrated circuits such as multi-wavelength laser chips and broadband superluminescent diodes in GaAs/AlGaAs QW structures. Postgrowth bandgap engineering using low energy neutral ion implantation technique has been developed in InGaAs/InGaAsP QW systems. Using this interdiffusion technique, 10-channel multi-wavelength lasers and 8-channel integrated optical performance monitors have been demonstrated. The effects of IFVD and IID on the interdiffusion of InGaAs/GaAs QDs have been investigated. High spatial bandgap selectively processes with differential bandgap shifts between the interdiffused and non-interdiffused sections of over 100 meV have been observed from both IFVD and IID techniques in InGaAs/GaAs QD laser structure. At theoretical modeling level, we have developed a unified three-dimensional model for the electronic states calculation of the interdiffused quantum nanostructures with arbitrary shape, which is universally applicable to various quantum structures such as QW, quantum wire, quantum dash, and QDs. This model serves as a valuable tool to gain a more physical understanding of interdiffusion or intermixing techniques suitable for the integration technology in quantum nanostructures.

[1]  Vincent Aimez,et al.  Analysis of strain-induced polarisation-insensitive integrated waveguides fabricated using ion-implantation-induced intermixing , 2002 .

[2]  M. Kuzuhara,et al.  Characterization of Ga out‐diffusion from GaAs into SiOxNy films during thermal annealing , 1989 .

[3]  Boon S. Ooi,et al.  Quantum well intermixing enhancement using Ge-doped sol-gel derived SiO2 encapsulant layer in InGaAs∕InP laser structure , 2005 .

[4]  J. Marsh.  Quantum well intermixing , 1993 .

[5]  V. Aimez,et al.  Origin of the inhomogenous broadening and alloy intermixing in InAs/GaAs self-assembled quantum dots , 2000 .

[6]  H. S. Djie,et al.  Electronics states of interdiffused quantum dots , 2005 .

[7]  A. C. Bryce,et al.  Engineering quantum-dot lasers , 2000 .

[8]  M. Pate,et al.  Tuning self-assembled InAs quantum dots by rapid thermal annealing , 1997 .

[9]  J. Fastenau,et al.  Emission wavelength trimming of self-assembled InGaAs/GaAs quantum dots with GaAs/AlGaAs superlattices by rapid thermal annealing , 2007 .

[10]  Ting Mei,et al.  Plasma-induced quantum well intermixing for monolithic photonic integration , 2005, IEEE Journal of Selected Topics in Quantum Electronics.

[11]  V. Aimez,et al.  A novel fabrication technique for multiple-wavelength photonic-integrated devices in InGaAs-InGaAsP laser heterostructures , 2002, IEEE Photonics Technology Letters.

[12]  Philip J. Poole,et al.  BAND-GAP TUNING OF INGAAS/INGAASP/INP LASER USING HIGH ENERGY ION IMPLANTATION , 1995 .

[13]  H. Tan,et al.  Suppression of interdiffusion in InGaAs/GaAs quantum dots using dielectric layer of titanium dioxide , 2003 .

[14]  黄文秀,et al.  Quantum well intermixing , 2001 .

[15]  J. Ziegler.  THE STOPPING AND RANGE OF IONS IN SOLIDS , 1988 .

[16]  S. L. Ng,et al.  Generation of Multiple Energy Bandgaps Using a Gray Mask Process and Quantum Well Intermixing , 2002 .

[17]  InGaAs/GaAs quantum-dot intermixing using arsenic and phosphorus ion implantation-induced disordering , 2006 .

[18]  Chennupati Jagadish,et al.  Study of intermixing in a GaAs/AlGaAs quantum-well structure using doped spin-on silica layers , 2002 .

[19]  John H. Marsh,et al.  Selective quantum-well intermixing in GaAs-AlGaAs structures using impurity-free vacancy diffusion , 1997 .

[20]  Vincent Aimez,et al.  Low-energy ion-implantation-induced quantum-well intermixing , 2002 .

[21]  Karl Hess,et al.  Disorder of an AlAs‐GaAs superlattice by impurity diffusion , 1981 .

[22]  John H. Marsh,et al.  Suppression of bandgap shifts in GaAs/AlGaAs quantum wells using strontium fluoride caps , 1992 .

[23]  O. Gunawan,et al.  Multiple-wavelength integration in InGaAs-InGaAsP structures using pulsed laser irradiation-induced quantum-well intermixing , 2004, IEEE Journal of Quantum Electronics.

[24]  Ting Mei,et al.  Plasma-induced quantum well intermixing for monolithic photonic integration , 2005 .

[25]  Xiaoshuang Chen,et al.  InAs/GaAs quantum dot intermixing induced by proton implantation , 2003 .

[26]  Suzuki,et al.  Fabrication of a GaAs quantum-well-wire structure by Ga focused-ion-beam implantation and its optical properties. , 1988, Physical review. B, Condensed matter.

[27]  Jin Zou,et al.  Novel impurity-free interdiffusion in GaAs/AlGaAs quantum wells by anodization and rapid thermal annealing , 1997 .

[28]  John H. Marsh,et al.  Suppression of quantum well intermixing in GaAs/AlGaAs laser structures using phosphorus-doped SiO2 encapsulant layer , 1997 .