4.0 Gb/s NMOS laser driver

A 4.0-GB/s NMOS laser driver has been designed and fabricated in 0.75-μm technology with a typical <e1>L</e1><sub>eff</sub>=0.65 μm. The IC provides an adjustable modulation current pulse of 20-60 mA into an equivalent 25-Ω load. The rise and fall times (10 to 90%) are approximately 70 ps and 120 ps, respectively with a <e1>V</e1> <sub>DD</sub>=3.3 V±10%

[1]  W. Fichtner,et al.  High-speed low-power circuits fabricated using a submicron NMOS technology , 1985, IEEE Electron Device Letters.

[2]  K. A. Yanushefski,et al.  1.7 Gb/s NMOS laser driver , 1988, Proceedings of the IEEE 1988 Custom Integrated Circuits Conference.