论文信息 - Fermi-level depinning for low-barrier Schottky source/drain transistors

Fermi-level depinning for low-barrier Schottky source/drain transistors

By imposing an ultrathin insulator between low-work function metals and silicon, the Schottky barrier of the junction can be substantially reduced, decreasing junction resistance. With this approach, low-Schottky-barrier metal source/drain (S/D) transistors with Mg and Yb as S/D metals are demonstrated.

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