Self Annealing Implantation of As+ IN SILICON
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[1] M. Berti,et al. Dose rate effects on the dynamic annealing mechanism in P+ -implanted silicon , 1986 .
[2] K. Holldack,et al. Anomalous Diffusion of Boron in Silicon Due to Heavy Ion Bombardment , 1986 .
[3] M. Berti,et al. On the Dynamic Annealing Mechanism in P+‐Implanted Silicon , 1986 .
[4] M. Grimaldi,et al. Ion beam and temperature annealing during high dose implants , 1985 .
[5] R. Elliman,et al. Ion beam induced epitaxial crystallisation of silicon , 1985 .
[6] Giorgio Lulli,et al. Transmission Electron Microscopy of Self-Annealed Ion Implanted Silicon , 1985 .
[7] J. Linnros,et al. Ion-beam-induced epitaxial regrowth of amorphous layers in silicon on sapphire , 1984 .
[8] R. Tauber,et al. The nature of defect layer formation for arsenic ion implantation , 1983 .
[9] S. Loualiche,et al. Theoretical Model for Radiation Enhanced Diffusion and Redistribution of Impurities. Comparison with Experiments , 1982 .
[10] F. Zignani,et al. Self‐annealing of ion‐implanted silicon: First experimental results , 1981 .
[11] H. Dunlap,et al. Impurity‐peak formation during proton‐enhanced diffusion of phosphorus and boron in silicon , 1979 .
[12] L. Csepregi,et al. Reordering of amorphous layers of Si implanted with 31P, 75As, and 11B ions , 1977 .