High-performance 0.1-/spl mu/m gate enhancement-mode InAlAs/InGaAs HEMT's using two-step recessed gate technology
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Tetsuya Suemitsu | Yohtaro Umeda | Takatomo Enoki | Haruki Yokoyama | Yasunobu Ishii | T. Enoki | H. Yokoyama | T. Suemitsu | Y. Umeda | Y. Ishii
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