Scaling SOI MESFETs to 150-nm CMOS Technologies

Metal-semiconductor field-effect transistors (MESFETs) have been fabricated using a 150-nm partially depleted silicon-on-insulator complementary metal-oxide-semiconductor (CMOS) technology. Minimum gate lengths of 150 nm have been achieved, which represents a significant reduction compared with an earlier demonstration using a 350-nm CMOS technology. The scaled MESFETs with Lg = 150 nm have a current drive that exceeds 200 mA/mm with a peak fT >; 35 GHz. This is considerably higher than the Lg = 400 nm MESFET with a current drive of ~70 mA/mm and a peak fT = 10.6 GHz, which was possible with the earlier generation. However, short-channel effects become significant for Lg <; 400 nm, resulting in an optimum MESFET gate length for this technology in the range of 200-300 nm.

[1]  J. A. del Alamo,et al.  A new drain-current injection technique for the measurement of off-state breakdown voltage in FETs , 1993 .

[2]  J. Yang,et al.  Large-Signal Modeling of SOI MESFETs , 2005, 2005 International Semiconductor Device Research Symposium.

[3]  Self-aligned Si MESFETs fabricated in thin silicon-on-insulator films , 1987 .

[4]  B. Bakkaloglu,et al.  A capacitor-free LDO using a FD Si-MESFET pass transistor , 2009, 2009 52nd IEEE International Midwest Symposium on Circuits and Systems.

[5]  T. Thornton,et al.  SOI MESFETs Fabricated Using Fully Depleted CMOS Technologies , 2009, IEEE Electron Device Letters.

[6]  J. Plummer,et al.  Device physics and technology of complementary silicon MESFET's for VLSI applications , 1991 .

[7]  Benjamin J. Blalock,et al.  Silicon-based integrated mosfets and mesfets : A new paradigm for low power, mixed signal, monolithic systems using commercially available soi , 2006 .

[8]  S.J. Wilk,et al.  45 GHz silicon MESFETs on a 0.15 µm SOI CMOS process , 2009, 2009 IEEE International SOI Conference.

[9]  Yu Cao,et al.  Compact modeling of a PD SOI MESFET for wide temperature designs , 2009, Microelectron. J..

[10]  Trevor Thornton.  Physics and applications of the Schottky junction transistor , 2001 .

[11]  Mau-Phon Houng,et al.  Modeling of threshold voltage and subthreshold swing of short-channel SOI MESFET's , 1999 .

[12]  G. Burbach,et al.  MESFETs in thin silicon on SIMOX , 1989 .

[13]  Manfred Berroth,et al.  High-frequency equivalent circuit of GaAs FETs for large-signal applications , 1991 .

[14]  A. Balijepalli,et al.  CMOS-Compatible SOI MESFETs With High Breakdown Voltage , 2006, IEEE Transactions on Electron Devices.