Effect of InGaAs strain reducing layer and rapid thermal annealing on the properties of InAs/GaAs quantum

In this study, uniform InAs QDs were grown on the GaAs (001) substrate by MBE by the S-K mode. The effects of strain reducing layer and rapid thermal anneling on the optical properties of InAs/(In)GaAs QDs were investigated by PL measurements. The annealing results in PL peak energy red-shift which strongly depends on In composition of InxGaAs strained reducing layer , QDs with lower density and/or capped by an InGaAs layer are very sensitive to the annealing. At given annealing conditions, PL peak energy blue-shift of low-density QDs is much larger than that of high density QDs.