Transient Off-Current in Junctionless FETs
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D. Bouvet | F. Jazaeri | J. Sallese | F. Jazaeri | D. Bouvet | L. Barbut | J-M Sallese | L. Barbut
[1] Adrian M. Ionescu,et al. Modeling of drain current overshoot and recombination lifetime extraction in floating-body submicron SOI MOSFETs , 2002 .
[2] Sorin Cristoloveanu,et al. Generation-recombination transient effects in partially depleted SOI transistors: systematic experiments and simulations , 1998 .
[3] J. Sallese,et al. Charge-Based Modeling of Junctionless Double-Gate Field-Effect Transistors , 2011, IEEE Transactions on Electron Devices.
[4] François Krummenacher,et al. Derivation of Shockley-Read-Hall recombination rates in bulk and PD-SOI MOSFET's channels valid in all modes of operation , 2004 .
[5] Chi-Woo Lee,et al. Junctionless multigate field-effect transistor , 2009 .
[6] A. Kranti,et al. Junctionless nanowire transistor (JNT): Properties and design guidelines , 2010, 2010 Proceedings of the European Solid State Device Research Conference.
[7] Farzan Jazaeri,et al. On performance scaling and speed of junctionless transistors , 2013 .
[8] F. Jazaeri,et al. Modeling and Design Space of Junctionless Symmetric DG MOSFETs With Long Channel , 2013, IEEE Transactions on Electron Devices.
[9] S. Cristoloveanu,et al. Characterization of carrier generation in enhancement-mode SOI MOSFET's , 1990, IEEE Electron Device Letters.
[10] Dimitris E. Ioannou,et al. Investigation of carrier generation in fully depleted enhancement and accumulation mode SOI MOSFET's , 1994 .
[11] Chi-Woo Lee,et al. Nanowire transistors without junctions. , 2010, Nature nanotechnology.