Synthesis, structural, X-ray photoelectron spectroscopy (XPS) studies and IR induced anisotropy of Tl4HgI6 single crystals

[1]  V. T. Vu,et al.  Electronic structure and optical properties of Cs 2 HgCl 4 : DFT calculations and X-ray photoelectron spectroscopy measurements , 2016 .

[2]  I. Kityk,et al.  Tl10Hg3Cl16: Single crystal growth, electronic structure and piezoelectric properties , 2016 .

[3]  I. Kityk,et al.  Single crystal growth and electronic structure of TlPbI3 , 2016 .

[4]  I. Kityk,et al.  Tl4SnS3, Tl4SnSe3 and Tl4SnTe3 crystals as novel IR induced optoelectronic materials , 2016, Journal of Materials Science: Materials in Electronics.

[5]  G. Myronchuk,et al.  Growth, structure and optical properties of Tl4HgBr6 single crystals , 2015 .

[6]  G. Myronchuk,et al.  Single crystal growth, structure and properties of TlHgBr3 , 2015 .

[7]  V. T. Vu,et al.  Single crystal growth, electronic structure and optical properties of Cs2HgBr4 , 2015 .

[8]  V. T. Vu,et al.  Electronic structure and optical properties of Cs2HgI4: Experimental study and band-structure DFT calculations , 2015 .

[9]  O. Kushnir,et al.  Structural Transformations in Tl4HgI6 and Tl4CdI6 Crystals as Evidenced by Dielectric Properties and Conductivity , 2014 .

[10]  I. Kityk,et al.  Specific features of the electronic structure of a novel ternary Tl3PbI5 optoelectronic material. , 2014, Physical chemistry chemical physics : PCCP.

[11]  M. Kanatzidis,et al.  Crystal Growth of Tl4CdI6: A Wide Band Gap Semiconductor for Hard Radiation Detection , 2014 .

[12]  A. Fedorchuk,et al.  First-principles band-structure calculations and X-ray photoelectron spectroscopy studies of the electronic structure of TlPb2Cl5 , 2014 .

[13]  Y. Vlasov,et al.  Thallium-selective sensor with a membrane based on Tl4HgI6 ionic conductor , 2013, Russian Journal of Applied Chemistry.

[14]  M. Piasecki,et al.  Growth, crystal structure, thermal properties and optical anisotropy of Tl4CdI6 single crystals * , 2013 .

[15]  G. Myronchuk,et al.  Temperature operated infrared nonlinear optical materials based on Tl4HgI6 , 2013, Journal of Materials Science: Materials in Electronics.

[16]  L. Isaenko,et al.  Electronic structure and fundamental absorption edges of KPb2Br5, K0.5Rb0.5Pb2Br5, and RbPb2Br5 single crystals , 2012 .

[17]  S. McLaughlin,et al.  Performance of novel materials for radiation detection: Tl3AsSe3, TlGaSe2, and Tl4HgI6 , 2011 .

[18]  Victor V. Atuchin,et al.  Structural and Electronic Properties of ZnWO4(010) Cleaved Surface , 2011 .

[19]  A. K. Sinelnichenko,et al.  Electronic structure of Ti4Fe2Ox as determined from first-principles APW + LO calculations and X-ray spectroscopy data , 2010 .

[20]  Y. Vlasov,et al.  Diffusion of Tl-204 isotope and ionic conductivity in Tl4HgI6 membrane material for chemical sensors , 2008 .

[21]  Rafiuddin,et al.  Ionic conduction and effect of cation doping in Tl4HgI6 , 2007 .

[22]  D. Suhre,et al.  Periodically poled materials for long wavelength infrared (LWIR) NLO applications , 2005 .

[23]  V. A. Pavlovskii Electrolytes for Tungsten Refining , 2004 .

[24]  V. Rybakov,et al.  Growth and X-ray Diffraction Study of Tl4HgI6 Crystals , 2004 .

[25]  V. Panyutin,et al.  Optical properties of thallium mercury iodide , 2003 .

[26]  M. Seah,et al.  Practical Surface Analysis , 1992 .

[27]  I. Kityk,et al.  Band energy parameters and density functions of orthorhombic TlI , 1992 .

[28]  Y. Furukawa,et al.  Electrical Conductivity and Thallium Spin-Lattice Relaxation Time Measurements of Tl4HgBr6 and Tl4HgI6 , 1990 .

[29]  J. Kennedy,et al.  Composition and properties of thallium mercury iodide , 1990 .

[30]  M. Seah,et al.  Auger and x-ray photoelectron spectroscopy , 1990 .

[31]  H. Beck,et al.  Study on A4BX6 Compounds. III [1]. ns2 cations as a prerequisite for a structure type and their interaction in ternary halides with the formula type A4BX6 (A: In, TI; B: Cd, Pb, Ge; X: Cl, Br, I) , 1988 .

[32]  H. Beck,et al.  Study on A4BX6 compounds. I. Structure Refinement of Ternary Cd Halides A4CdX6 (A = NH4, K, Rb, In, Tl; X = Cl, I)† , 1986 .

[33]  G. V. Seguel,et al.  The Raman Spectra of Some Thermochromic Tetraiodomercurates , 1986 .

[34]  D. Adams,et al.  Spectroscopy at very high pressures: 45—structural phase transitions in A2HgI4, (A = Ag, Cu, Tl, 1/2Pb), investigated by Raman scattering , 1983 .

[35]  G. Thiele,et al.  Die Kristallstruktur des Thallium(I)‐hexaiodomercurat(II), Tl4Hgl6 , 1979 .

[36]  D. Shriver,et al.  Raman Line Broadening in the Superionic Conductors, Ag2 [ HgI4 ] , and Cu2 [ HgI4 ] , 1976 .

[37]  W. Wendlandt High temperature reflectance spectroscopy and dynamic reflectance spectroscopy , 1971 .

[38]  W. Wendlandt,et al.  High temperature reflectance spectroscopy: application to thermochromic compounds☆ , 1970 .

[39]  R. Weil,et al.  Pressure Dependence of the Electrical Conductivity of Ag2Hgl4 , 1964 .

[40]  E. Diczfalusy,et al.  The Magnetic Properties of the Thermochromic Compounds Cu2HgI4, Ag2HgI4, and Tl2HgI4. Studies in Magnetochemistry 23. , 1958 .