论文信息 - HYDROGENATION-DEFINED STRIPE-GEOMETRY IN0.5(ALXGA1-X)0.5P QUANTUM-WELL LASERS

HYDROGENATION-DEFINED STRIPE-GEOMETRY IN0.5(ALXGA1-X)0.5P QUANTUM-WELL LASERS

Data are presented on the continuous‐wave (cw), room‐temperature (300 K) operation of stripe‐geometry In0.5(AlxGa1−x)0.5P quantum‐well heterostructure lasers defined via hydrogenation. Passivation of the Zn acceptors in the cap and upper confining layer provides gain guiding, and elimination of the current‐blocking oxide reduces the thermal impedance. The resultant device is capable of better performance than conventional oxide‐stripe diodes fabricated on the same material.

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