Temperature-dependent GaSb material parameters for reliable thermophotovoltaic cell modelling

GaSb photovoltaic cells are the most common choice for receivers in thermophotovoltaic (TPV) systems. Although nowadays their manufacturing technology is well established, a theoretical simulation frame for their modelling under real TPV operating conditions is still not fully developed. This is basically due to the lack of a reliable and accurate set of GaSb material parameters as input for the semiconductor simulation tools. Thorough GaSb TPV cell models are needed to understand the electro-optical behaviour of the cells and eventually are essential in improving their design. This work will try to go beyond this key issue, carefully analysing and reviewing some of the key parameters for GaSb. A complete set of material parameters, including revised values for the intrinsic concentration, the electron and hole mobilities and the absorption coefficient, is given based on extended reviews of previously published data. For the first time, estimations for their temperature dependences are introduced. Finally, GaSb TPV cells are manufactured and characterized inside a real TPV system prototype. The comparisons between the electrical measurements and the model theoretical predictions confirm the validity of the proposed set of GaSb material parameters and their temperature dependences.

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