Two-step growth of metamorphic GaAs/AlGaAs mirror on an InP substrate by MOCVD
暂无分享,去创建一个
[1] J. W. Matthews,et al. Defects in epitaxial multilayers: I. Misfit dislocations* , 1974 .
[2] Alex Mutig,et al. Frequency response of large aperture oxide-confined 850 nm vertical cavity surface emitting lasers , 2009 .
[3] R. Iga,et al. Single transverse mode operation of 1.55-μm buried heterostructure vertical-cavity surface-emitting lasers , 2002, IEEE Photonics Technology Letters.
[4] Characterization of GaAs buffer layer function in GaAs/InP strained structure grown by MBE , 1996 .
[5] K. Hiruma,et al. Surface migration and reaction mechanism during selective growth of GaAs and AlAs by metalorganic chemical vapor deposition , 1990 .
[6] Chennupati Jagadish,et al. Growth of highly strained InGaAs quantum wells on GaAs substrates—effect of growth rate , 2005 .
[7] Y. Itoh,et al. The effect of V/III ratio on the initial layer of GaAs on Si , 1992 .
[9] H. Strunk,et al. The driving force for dislocation multiplication in the substrate of misfitting heteroepitaxial systems , 1995 .
[10] P. Wolf,et al. 40 Gbit/s modulation of 1550 nm VCSEL , 2011 .
[11] K. Oe,et al. Lateral GaAs growth over tungsten gratings on (001) GaAs substrates by metalorganic chemical vapor deposition and applications to vertical field‐effect transistors , 1984 .
[12] S. Chu,et al. Lattice‐mismatch‐generated dislocation structures and their confinement using superlattices in heteroepitaxial GaAs/InP and InP/GaAs grown by chemical beam epitaxy , 1989 .
[13] J. Boucart,et al. Optimization of the metamorphic growth of GaAs for long wavelength VCSELs , 1999 .
[14] Alex Mutig,et al. High-performance 980 nm VCSELs for 12.5 Gbit/s data transmission at 155°C and 49 Gbit/s at -14°C , 2012 .
[15] E. Derouin,et al. Metamorphic DBR and tunnel-junction injection. A CW RT monolithic long-wavelength VCSEL , 1999 .
[16] Jesper Berggren,et al. Optical loss and interface morphology in AlGaAs∕GaAs distributed Bragg reflectors , 2007 .
[17] Mattias Hammar,et al. Doping-induced losses in AlAs/GaAs distributed Bragg reflectors , 2001 .
[18] P. Cohen,et al. Surface reconstructions and growth mode transitions of AlAs(100) , 1995 .
[19] John E. Bowers,et al. GaAs to InP wafer fusion , 1995 .