An accurate compact model for CMOS cross-shaped Hall effect sensors

Abstract The paper describes a new design-oriented compact model for horizontal Hall effect devices. This model is based on the physics of semi-conductor and is simplified according to some assumptions verified through experimental results and/or numerical simulations. Compared to existing models, it has the advantage to take most of the first-order effects into account while allowing fast simulations. A procedure to extract the parameters of the model is given and simulation results are compared to experimental data measured on a cross-shaped sensor designed in a standard 0.35 μm CMOS technology. The maximum error between simulation results and experimental data is less than 1%.

[1]  S. M. Sze,et al.  Physics of semiconductor devices , 1969 .

[2]  Robert Hull,et al.  Properties of Crystalline Silicon , 1999 .

[3]  T. Pesic,et al.  3D simulation of cross-shaped Hall sensor and its equivalent circuit model , 2004, 2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716).

[4]  J.H. Huijsing,et al.  CMOS quad spinning-current Hall sensor system for compass application , 2004, Proceedings of IEEE Sensors, 2004..

[5]  A. Kerlain,et al.  Hybrid Hall microsystem for high dynamic range/large bandwidth magnetometry applications , 2008, 2008 IEEE Sensors.

[6]  P.M. Drljaca,et al.  Horizontal Hall Devices: A Lumped-Circuit Model for EDA Simulators , 2007, TRANSDUCERS 2007 - 2007 International Solid-State Sensors, Actuators and Microsystems Conference.

[7]  P. Radeva,et al.  Integration of multiple sensor modalities in active vessel cardiology workstation , 2004, 2004 2nd International IEEE Conference on 'Intelligent Systems'. Proceedings (IEEE Cat. No.04EX791).

[8]  E. Ramsden.  Hall-effect sensors : theory and applications , 2006 .

[9]  Sandra Bellekom,et al.  Influence of mechanical stress on the offset voltage of Hall devices operated with spinning current method , 1999 .

[10]  T. Okabe,et al.  Silicon hall-effect power IC's for brushless motors , 1982, IEEE Transactions on Electron Devices.

[11]  W. Versnel,et al.  Analysis of symmetrical Hall plates with finite contacts , 1981 .

[12]  Philippe Poure,et al.  Horizontal Hall effect sensor with high maximum absolute sensitivity , 2002, Proceedings of IEEE Sensors.

[13]  J. Schweda,et al.  A nonlinear simulation model of integrated Hall devices in CMOS silicon technology , 2002, Proceedings of the 2002 IEEE International Workshop on Behavioral Modeling and Simulation, 2002. BMAS 2002..

[14]  Franco Maloberti,et al.  Behavioral model of magnetic sensors for SPICE simulations , 2005, 2005 12th IEEE International Conference on Electronics, Circuits and Systems.

[15]  Radivoje Popovic,et al.  Hall effect devices , 1991 .

[16]  H. Baltes,et al.  Integrated semiconductor magnetic field sensors , 1986, Proceedings of the IEEE.

[17]  Radivoje Popovic,et al.  Integrated Hall-effect magnetic sensors , 2001 .

[18]  A. Udo.  Limits of offset cancellation by the principle of spinning current Hall probe , 2004, Proceedings of IEEE Sensors, 2004..

[19]  A. Nathan,et al.  Two-dimensional numerical analysis of a silicon magnetic field sensor , 1984, IEEE Transactions on Electron Devices.

[20]  L. Hebrard,et al.  3D Hall probe integrated in 0.35 μm CMOS technology for magnetic field pulses measurements , 2008, 2008 Joint 6th International IEEE Northeast Workshop on Circuits and Systems and TAISA Conference.

[21]  J. Pascal,et al.  CMOS integrated system for magnetic field monitoring and gradient measurement in MRI environment , 2007, 2007 50th Midwest Symposium on Circuits and Systems.

[22]  Ken Kundert,et al.  The designer's guide to Verilog-AMS , 2004 .