Kinetic limits to growth on (001) and (110) GaAs by OMCVD

[1]  A. A. Studna,et al.  Temporal and spectral dependences of the anisotropic dielectric responses of singular and vicinal (001) GaAs surfaces during interrupted molecular‐beam epitaxy growth , 1989 .

[2]  Rajaram Bhat,et al.  Reflectance–difference studies of organometallic chemical vapor deposition growth transients on (001) GaAs , 1989 .

[3]  A. A. Studna,et al.  Reflectance-difference studies of organometallic chemical-vapor-deposition growth transients on (001) GaAs , 1989 .

[4]  Bhat,et al.  Kinetic limits of monolayer growth on (001) GaAs by organometallic chemical-vapor deposition. , 1988, Physical review letters.

[5]  S. Namba,et al.  A Growth Analysis for Metalorganic Vapor Phase Epitaxy of GaAs , 1988 .

[6]  J. P. Harbison,et al.  Application of reflectance difference spectroscopy to molecular‐beam epitaxy growth of GaAs and AlAs , 1988 .

[7]  S. Denbaars,et al.  GaAs/AlGaAs quantum well lasers with active regions grown by atomic layer epitaxy , 1987 .

[8]  K. Jensen,et al.  In situ mass spectroscopy and thermogravimetric studies of GaAs MOCVD gas phase and surface reactions , 1987 .

[9]  Flórez,et al.  Optical reflectance and electron diffraction studies of molecular-beam-epitaxy growth transients on GaAs(001). , 1987, Physical review letters.

[10]  W. Richter,et al.  Ultraviolet‐assisted growth of GaAs , 1987 .

[11]  S. Iyer,et al.  Summary Abstract: Epitaxy of monolayer silicon films studied by optical second‐harmonic generation , 1987 .

[12]  N. G. Chew,et al.  In-situ light scattering studies of substrate cleaning and layer nucleation in silicon MBE , 1987 .

[13]  R. Bhat,et al.  The growth and characterization of AlGaAs using dimethyl aluminum hydride , 1986 .

[14]  D. Aspnes Above-bandgap optical anisotropies in cubic semiconductors: A visible-near ultraviolet probe of surfaces , 1985 .

[15]  Aspnes,et al.  Anisotropies in the above-bandgap optical spectra of cubic semiconductors. , 1985, Physical review letters.

[16]  S. Ghandhi,et al.  Deposition of GaAs Epitaxial Layers by Organometallic CVD Temperature and Orientation Dependence , 1983 .

[17]  V. Gottschalch,et al.  Epitaxial Deposition of GaAs in the Ga (CH3)3AsH3H2-System (IV) Thermodynamic and Kinetic Considerations , 1974 .