Quenching and recovery of photoluminescence intensity of silicon nanoparticles embedded in optically transparent polymers

The quenching of photoluminescence (PL) intensity due to exposure to laser radiation (0.25 W cm−2) and complete recovery is observed for porous silicon nanoparticles (PSNs) embedded in an optically transparent ultraviolet cured polymer. Under identical laser exposures, the PL intensity of PSNs embedded in transparent polymer and as-prepared porous silicon quenches rapidly for the initial 15 min, followed by a slower rate of decay. On the other hand, a complete lack of quenching is seen in PSNs embedded in polymethylmethacrylate (PMMA). An empirical relation using two time constants has modelled the decay. The time constants characterizing the initial and later stages of quenching are larger for the PSNs embedded in the optical polymer by a factor of four to ten. A method for monitoring the recovery process avoiding quenching during measurement has been identified. The recovery process is slow with a time constant much larger than that observed during quenching.

[1]  Insulating films on a quantum semiconductor: light emitting porous silicon , 1995 .

[2]  Michael J. Sailor,et al.  Reversible luminescence quenching of porous silicon by solvents , 1992 .

[3]  Porous silicon photoluminescence versus HF etching: No correlation with surface hydrogen species , 1993 .

[4]  M. Sailor,et al.  Luminescent Color Image Generation on Porous Silicon , 1992, Science.

[5]  Photoinduced luminescence enhancement from anodically oxidized porous Si , 1993 .

[6]  J. Buriak,et al.  LEWIS ACID MEDIATED FUNCTIONALIZATION OF POROUS SILICON WITH SUBSTITUTED ALKENES AND ALKYNES , 1998 .

[7]  Sharka M. Prokes,et al.  Light emission in thermally oxidized porous silicon: Evidence for oxide‐related luminescence , 1993 .

[8]  A. Ksendzov,et al.  Electronic structure of light-emitting porous Si , 1992 .

[9]  K. Kolasinski,et al.  On the role of the pore filling medium in photoluminescence from photochemically etched porous silicon , 2000 .

[10]  Philippe M. Fauchet,et al.  Tunability of the photoluminescence in porous silicon due to different polymer dielectric environments , 1998 .

[11]  Anomalous photoluminescence behavior of porous Si , 1993 .

[12]  A. G. Cullis,et al.  The structural and luminescence properties of porous silicon , 1997 .

[13]  Time dependence and optical quenching of photoluminescence in porous silicon , 1993 .

[14]  M. Ghadiri,et al.  A porous silicon-based optical interferometric biosensor. , 1997, Science.

[15]  W. Theiß,et al.  From Minutes to Months: Ageing of Porous Silicon Single Layers and Superlattices , 1995 .

[16]  D. Kwong,et al.  Developments in Luminescent Porous Si , 1993 .

[17]  Grace M. Credo,et al.  Luminescent Colloidal Silicon Suspensions from Porous Silicon , 1992, Science.

[18]  L. Canham.  Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers , 1990 .

[19]  P. Hesketh,et al.  Rapid, reversible, sensitive porous silicon gas sensor , 2002 .

[20]  J. Buriak,et al.  Chemical and Biological Applications of Porous Silicon Technology , 2000 .

[21]  James H. Stathis,et al.  Luminescence degradation in porous silicon , 1992 .