A simplified broad-band large-signal nonquasi-static table-based FET model

In this paper, a simplified nonquasi-static table-based approach is developed for high-frequency broad-band large-signal field-effect-transistor modeling. As well as low-frequency dispersion, the quadratic frequency dependency of the /spl gamma/-parameters at high frequencies is taken into account through the use of linear delays. This model is suitable for applications related to nonlinear microwave computer-aided design and can be both easily extracted from dc and S-parameter measurements and implemented in commercially available simulation tools. Model formulation, small-signal, and large-signal validation will be described in this paper. Excellent results are obtained from dc up to the device f/sub T/ frequencies, even when f/sub T/ is as high as 100 GHz.

[1]  D. M. Snider,et al.  A theoretical analysis and experimental confirmation of the optimally loaded and overdriven RF power amplifier , 1967 .

[2]  A. Werthof,et al.  A Unified Consistent DC to RF Large Signal FET Model Covering the Strong Dispersion Effects of HEMT Devices , 1992, 1992 22nd European Microwave Conference.

[3]  P. J. Tasker,et al.  A Vector Corrected High Power On-Wafer Measurement System with a Frequency Range for the Higher Harmomcs up to 40 GHz , 1994, 1994 24th European Microwave Conference.

[4]  I. Angelov,et al.  Extensions of the Chalmers nonlinear HEMT and MESFET model , 1996 .

[5]  H. A. Willing,et al.  Simulation of Nonlinear Microwave FET Performance Using a Quasi-Static Model , 1979 .

[6]  R. Anholt,et al.  Equivalent-circuit parameter extraction for cold GaAs MESFET's , 1991 .

[7]  G. Dambrine,et al.  A new method for determining the FET small-signal equivalent circuit , 1988 .

[8]  R. Daniels,et al.  A universal large/small signal 3-terminal FET model using a nonquasistatic charge-based approach , 1993 .

[9]  H. Massler,et al.  38/76 GHz GaAs PHEMT Frequency Doublers in CPW Technology , 1998, 1998 28th European Microwave Conference.

[10]  P J Tasker,et al.  A simplified nonquasi-static table based FET model , 1996, 1996 26th European Microwave Conference.

[11]  Ignasi Corbella,et al.  Instantaneous model of a MESFET for use in linear and nonlinear circuit simulations , 1992 .

[12]  M. Fernandez-Barciela,et al.  Experimental Demonstration and CAD Investigation of Class B HFET Transistor Operation at Microwave Frequencies , 1998, 1998 28th European Microwave Conference.

[13]  R.W. Dutton,et al.  A charge-oriented model for MOS transistor capacitances , 1978, IEEE Journal of Solid-State Circuits.

[14]  J. J. Paulos,et al.  Unified nonquasi-static modeling of the long-channel four-terminal MOSFET for large- and small-signal analyses , 1989 .

[15]  Mónica Fernández Barciela.  Contribucion al modelado no lineal del modfet basado en tablas , 1996 .

[16]  J. Braunstein,et al.  New MODFET small signal circuit model required for millimeter-wave MMIC design: extraction and validation to 120 GHz , 1995, Proceedings of 1995 IEEE MTT-S International Microwave Symposium.

[17]  G Kompa,et al.  Dispersive table-based large-signal FET model validated in analysis of MMIC frequency doubler , 1996, 1996 26th European Microwave Conference.

[18]  M. Fernandez-Barciela,et al.  Accurate HEMT model extraction and validation in class A and B bias points using a full two-port large signal on-wafer measurement system , 1998, 1998 URSI International Symposium on Signals, Systems, and Electronics. Conference Proceedings (Cat. No.98EX167).

[19]  Giorgio Vannini,et al.  Mathematical approach to large-signal modelling of electron devices , 1991 .

[20]  Dominique Schreurs.  Table-based large-signal models based on large-signal measurements , 1996 .

[21]  D. E. Root,et al.  Statistical circuit simulation with measurement-based active device models: implications for process control and IC manufacturability , 1995, GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995.

[22]  Manfred Berroth,et al.  High-frequency equivalent circuit of GaAs FETs for large-signal applications , 1991 .

[23]  Ingo Wolff,et al.  A Physics-Based Non-Quasi-Static Large-Signal Model for GaAs MESFETs , 1994, 1994 24th European Microwave Conference.

[24]  M. C. Foisy,et al.  Large-signal relaxation-time model for HEMTs and MESFETs , 1992, 1992 IEEE Microwave Symposium Digest MTT-S.

[25]  M. Fernandez-Barciela,et al.  Simplified nonquasi-static FET modelling approach experimentally validated up to 118.5 GHz , 1997, 1997 IEEE MTT-S International Microwave Symposium Digest.

[26]  J G Leckey,et al.  The determination of the transistor dynamic I-V characteristic from large signal RF measurements , 1995, 1995 25th European Microwave Conference.

[27]  P. J. Tasker,et al.  Bias dependence of the MODFET intrinsic model elements values at microwave frequencies , 1989 .