High-frequency quantum-well infrared photodetectors measured by microwave-rectification technique

We explore the high-frequency capability of quantum-well infrared photodetectors using a microwave-rectification technique. We characterize a variety of devices with barrier thicknesses from 234 to 466 /spl Aring/ and number of wells from 4 to 32. Our packaged detectors have a relatively flat frequency response up to about 30 GHz. These experiments indicate that the intrinsic photoconductive lifetime for these devices in the high-biasing field regime is in the range of 5-6 ps.

[1]  Hui Chun Liu,et al.  Photoconductive gain mechanism of quantum‐well intersubband infrared detectors , 1992 .

[2]  M. Buchanan,et al.  Dark current in quantum well infrared photodetectors , 1993 .

[3]  A. Yariv,et al.  Voltage‐controlled tunable GaAs/AlGaAs multistack quantum well infrared detector , 1992 .

[4]  M.J. Manfra,et al.  Optical heterodyne detection and microwave rectification up to 26 GHz using quantum well infrared photodetectors , 1995, IEEE Electron Device Letters.

[5]  Carlo Sirtori,et al.  Measurement of the intersubband scattering rate in semiconductor quantum wells by excited state differential absorption spectroscopy , 1993 .

[6]  V. Ryzhii,et al.  Contact and distributed effects in quantum well infrared photodetectors , 1995 .

[7]  Ryan,et al.  Time-resolved Raman measurements of intersubband relaxation in GaAs quantum wells. , 1989, Physical review letters.

[8]  J. Nagle,et al.  Electron capture time measurements in GaAs/AlGaAs quantum‐well infrared photodetectors: Photoresponse saturation by a free‐electron laser , 1995 .

[9]  Emmanuel Rosencher,et al.  Capture time versus barrier thickness in quantum‐well structures measured by infrared photoconductive gain , 1993 .

[10]  R. Leibenguth,et al.  Optical and transport properties of single quantum well infrared photodetectors , 1993 .

[11]  D. Jaroszynski,et al.  Electron relaxation time measurements in GaAs/AlGaAs quantum wells: Intersubband absorption saturation by a free‐electron laser , 1995 .

[12]  Elliott R. Brown,et al.  Coherent detection with a GaAs/AlGaAs multiple quantum well structure , 1993 .

[13]  E. Rosencher,et al.  Injection mechanism at contacts in a quantum‐well intersubband infrared detector , 1992 .

[14]  Hui Chun Liu,et al.  Dependence of absorption spectrum and responsivity on the upper state position in quantum well intersubband photodetectors , 1993 .

[15]  J. Y. Andersson,et al.  Quantum Well Intersubband Transition Physics and Devices , 1994 .

[16]  J. Simmons,et al.  Multicolor voltage-tunable quantum-well infrared photodetector , 1993, IEEE Electron Device Letters.

[17]  Emmanuel Rosencher,et al.  The Physics of Emission-Recombination in Multiquantum Well Structures , 1994 .

[18]  M. Buchanan,et al.  Integrated quantum well intersub-band photodetector and light emitting diode , 1995 .

[19]  Kirby B. Nichols,et al.  Quantum well intersubband heterodyne infrared detection up to 82 GHz , 1995 .

[20]  B. F. Levine,et al.  Quantum‐well infrared photodetectors , 1993 .

[21]  J. S. Ahearn,et al.  Voltage tunable three‐color quantum well infrared photodetector , 1994 .