Magnetic tunnel junction device with perpendicular magnetization films for high-density magnetic random access memory
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Tadahiko Hirai | Tadahiko Hirai | N. Nishimura | A. Koganei | T. Ikeda | K. Okano | Y. Sekiguchi | Yoshiyuki Osada | Naoki Nishimura | Kazuhisa Okano | Akio Koganei | Takashi Ikeda | Yoshinobu Sekiguchi | Yoshiyuki Osada
[1] William J. Gallagher,et al. Exchange-biased magnetic tunnel junctions and application to nonvolatile magnetic random access memory (invited) , 1999 .
[2] GMR and TMR Films Using GdFe Alloy with Perpendicular Magnetization. , 2000 .
[3] J. N. Chapman,et al. Domain configurations of nanostructured Permalloy elements , 1999 .
[4] J. Slaughter,et al. Progress and outlook for MRAM technology , 1999, IEEE International Magnetics Conference.
[5] Jian-Gang Zhu,et al. Magnetization vortices and anomalous switching in patterned NiFeCo submicron arrays , 1999 .
[6] Saied N. Tehrani,et al. Geometry dependence of magnetization vortices in patterned submicron NiFe elements , 2000 .
[7] Jian-Gang Zhu,et al. Switching field variation in patterned submicron magnetic film elements , 1997 .
[8] Saied N. Tehrani,et al. Switching characteristics and magnetization vortices of thin-film cobalt in nanometer-scale patterned arrays , 2000 .
[9] S. Parkin,et al. Magnetization reversal and interlayer coupling in magnetic tunneling junctions , 2000 .