Precise optical modeling of blue light-emitting diodes by Monte Carlo ray-tracing.

Precise optical modeling of blue light-emitting diodes (LEDs) is constructed by reasonable optical parameters and Monte Carlo ray-tracing with the capability of precisely predicting light extraction and radiation pattern for both bare LED and packaged LED. Refractive indices and absorption coefficients of LED materials are determined by abundant references and comparisons between simulations and experiments. Surface roughness is considered in the optical model to improve the simulation precision. The simulation precisions are excellent for both bare blue LEDs (>96.5% for light extraction and >99% for radiation pattern) and packaged blue LEDs (>98.5% for both light extraction and radiation pattern).

[1]  Hao-Chung Kuo,et al.  Study of GaN light-emitting diodes fabricated by laser lift-off technique , 2004 .

[2]  M. Kuijk,et al.  Growth of InN on Ge(1 1 1) by molecular beam epitaxy using a GaN buffer , 2008 .

[3]  W. Shen,et al.  Temperature effects on optical properties of InN thin films , 2004 .

[4]  A. Ennaoui,et al.  Spectroscopic ellipsometry studies of index profile of indium tin oxide films prepared by spray pyrolysis , 2002 .

[5]  Sheng Liu,et al.  Studies on Optical Consistency of White LEDs Affected by Phosphor Thickness and Concentration Using Optical Simulation , 2010, IEEE Transactions on Components and Packaging Technologies.

[6]  A. Duparré,et al.  Comparative study of the roughness of optical surfaces and thin films by use of X-ray scattering and atomic force microscopy. , 1999, Applied optics.

[7]  E. Larkins,et al.  Improved refractive index formulas for the AlxGa1−xN and InyGa1−yN alloys , 2001 .

[8]  Shengjun Zhou,et al.  Study on sapphire removal for thin-film LEDs fabrication using CMP and dry etching , 2009 .

[9]  Chunhua Tan,et al.  Active packing method for blue light-emitting diodes with photosensitive polymerization: formation of self-focusing encapsulates. , 2008, Optics express.

[10]  D. S. Lee,et al.  Sapphire substrate misorientation effects on GaN nucleation layer properties , 2004 .

[11]  H. Morkoç,et al.  Energy band bowing parameter in AlxGa1-xN alloys , 2002 .

[12]  Aleksandra B. Djurišić,et al.  Modeling the optical constants of hexagonal GaN, InN, and AlN , 1999 .

[13]  Ching-Cherng Sun,et al.  Precise optical modeling for silicate-based white LEDs. , 2008, Optics express.

[14]  Tao Wang,et al.  Photoluminescence studies of InGaN/GaN multi-quantum wells , 2000 .

[15]  Takashi Jimbo,et al.  Optical properties of wurtzite structure GaN on sapphire around fundamental absorption edge (0.78–4.77 eV) by spectroscopic ellipsometry and the optical transmission method , 1997 .

[16]  H. Casey,et al.  Optical-field calculations for lossy multiple-layer AlxGa1−xN/InxGa1−xN laser diodes , 1998 .

[17]  G. Bentoumi,et al.  Influence of Si doping level on the Raman and IR reflectivity spectra and optical absorption spectrum of GaN , 1997 .

[18]  M. Dawson,et al.  Surface properties of GaN fabricated by laser lift-off and ICP etching , 2002 .

[19]  Davood Raoufi,et al.  Morphological characterization of ITO thin films surfaces , 2009 .

[20]  R. I. Gorbunov,et al.  Measurement of the absorption coefficient for light laterally propagating in light-emitting diode structures with In0.2Ga0.8N/GaN quantum wells , 2008 .

[21]  Akos Borbely,et al.  Performance of phosphor-coated LED optics in ray trace simulations , 2004, SPIE Optics + Photonics.

[22]  Nicolas Grandjean,et al.  Optical investigations and absorption coefficient determination of InGaN/GaN quantum wells , 2002 .

[23]  H Truckenbrodt,et al.  Interfacial roughness and related scatter in ultraviolet optical coatings: a systematic experimental approach. , 1998, Applied optics.

[24]  Kai Wang,et al.  Optical Analysis of Phosphor's Location for High-Power Light-Emitting Diodes , 2009 .

[25]  J Ferré-Borrull,et al.  Procedure to characterize microroughness of optical thin films: application to ion-beam-sputtered vacuum-ultraviolet coatings. , 2001, Applied optics.

[26]  P. Fauchet,et al.  Hot hole relaxation dynamics in p-GaN , 2000 .

[27]  Joachim Piprek,et al.  Refractive index of AlGaInN alloys , 1996 .

[28]  R. Martin,et al.  Exciton localization and the Stokes’ shift in InGaN epilayers , 1999 .

[29]  S J Lee,et al.  Analysis of light-emitting diodes by Monte Carlo photon simulation. , 2001, Applied optics.

[30]  Ching-Cherng Sun,et al.  Precise optical modeling for LED lighting verified by cross correlation in the midfield region. , 2006, Optics letters.

[31]  N. Kobayashi,et al.  Room-Temperature Absorption Edge of InGaN/GaN Quantum Wells Characterized by Photoacoustic Measurement , 2008 .

[32]  Xian-An Cao,et al.  Microstructural origin of leakage current in GaN/InGaN light-emitting diodes , 2004 .

[33]  E. Monroy,et al.  Low pressure MOVPE grown AlGaN for UV photodetector applications , 1999 .

[34]  K. Edagawa,et al.  Dislocation-related optical absorption in plastically deformed GaN , 2007 .

[35]  Y. Jung.  Spectroscopic ellipsometry studies on the optical constants of indium tin oxide films deposited under various sputtering conditions , 2004 .

[36]  Robert W. Martin,et al.  Origin of Luminescence from InGaN Diodes , 1999 .

[37]  J. Chyi,et al.  Mechanism of luminescence in InGaN/GaN multiple quantum wells , 2000 .

[38]  N. Tran,et al.  Studies of Phosphor Concentration and Thickness for Phosphor-Based White Light-Emitting-Diodes , 2008, Journal of Lightwave Technology.

[39]  Oliver Ambacher,et al.  Sub-bandgap absorption of gallium nitride determined by Photothermal Deflection Spectroscopy , 1996 .

[40]  Sun-Kyung Kim,et al.  An improved non-alloyed ohmic contact Cr/Ni/Au to n-type GaN with surface treatment , 2008 .

[41]  Ching-Cherng Sun,et al.  Light extraction analysis of GaN-based light-emitting diodes with surface texture and/or patterned substrate. , 2007, Optics express.

[42]  S. Denbaars,et al.  Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening , 2004 .

[43]  R. Sabia,et al.  Chemical mechanical polishing (CMP) anisotropy in sapphire , 2004 .

[44]  Takayuki Suzuki,et al.  Thermal and optical properties of bulk GaN crystals fabricated through hydride vapor phase epitaxy with void-assisted separation , 2005 .

[45]  E. Fortunato,et al.  Influence of oxygen/argon pressure ratio on the morphology, optical and electrical properties of ITO thin films deposited at room temperature , 2008 .

[46]  Ching-Cherng Sun,et al.  Analysis of the far-field region of LEDs. , 2009, Optics express.

[47]  N. K. Sahoo,et al.  Characterization of microroughness parameters in gadolinium oxide thin films: A study based on extended power spectral density analyses , 2005 .

[48]  E. Schubert,et al.  Analysis of high-power packages for phosphor-based white-light-emitting diodes , 2005 .

[49]  Spectroscopy and microscopy of localised and delocalised excitons in InGaN-based light emitting diodes and epilayers , 1999 .

[50]  S. Gwo,et al.  Spectroscopic ellipsometry study of wurtzite InN epitaxial films on Si(111) with varied carrier concentrations , 2005 .

[51]  Gary W. Wicks,et al.  Hot electron relaxation time in GaN , 1999 .

[52]  Sheng Liu,et al.  Optical Analysis of Color Distribution in White LEDs With Various Packaging Methods , 2008, IEEE Photonics Technology Letters.

[53]  R. W. Christy,et al.  Optical Constants of the Noble Metals , 1972 .

[54]  Wladek Walukiewicz,et al.  Optical properties and electronic structure of InN and In-rich group III-nitride alloys , 2004 .

[55]  Jianming Zhou.  Indium tin oxide (ITO) deposition, patterning and Schottky contact fabrication , 2006 .

[56]  V. R. Reddy,et al.  Effect of annealing temperature on electrical and structural properties of transparent indium tin oxide electrode to n-type GaN , 2009 .

[57]  W. Schmid,et al.  Absorption and light scattering in InGaN-on-sapphire- and AlGaInP-based light-emitting diodes , 2004, Journal of Lightwave Technology.

[58]  J. Chen,et al.  Optical and structural investigation on InGaN/GaN multiple quantum well light-emitting diodes grown on sapphire by metalorganic chemical vapor deposition , 2006, SPIE Optics + Photonics.

[59]  Hamza Abid,et al.  InxGa1-xN refractive index calculations , 2007, Microelectron. J..

[60]  H. E. Bennett,et al.  Relation between Surface Roughness and Specular Reflectance at Normal Incidence , 1961 .

[61]  Oliver Ambacher,et al.  Optical constants of epitaxial AlGaN films and their temperature dependence , 1997 .

[62]  J. Bennett,et al.  Surface roughness measurements of low-scatter mirrors and roughness standards. , 1984, Applied optics.

[63]  E. Schubert,et al.  Strongly Enhanced Phosphor Efficiency in GaInN White Light-Emitting Diodes Using Remote Phosphor Configuration and Diffuse Reflector Cup , 2005 .

[64]  Ching-Cherng Sun,et al.  Analysis of position-dependent light extraction of GaN-based LEDs. , 2005, Optics express.

[65]  Ivan Moreno,et al.  Light-emitting diode spherical packages: an equation for the light transmission efficiency. , 2011, Applied optics.