论文信息 - Enhanced Terahertz Emission from InAs Quantum Dots on GaAs

Enhanced Terahertz Emission from InAs Quantum Dots on GaAs

Optically pumped THz emission has been observed in a wide range of semiconductors, and this process is an important practical source of pulsed THz radiation for time-domain THz spectroscopy and THz imaging. We show that InAs quantum dots on GaAs can be used to significantly enhance THz emission compared with a bare GaAs surface.

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