Impact of Ballistic and Quasi-Ballistic Transport on Performances of Double-Gate MOSFET-Based Circuits

A drift-diffusion-like formulation for including ballistic and quasi-ballistic transport in the simulation of double-gate MOSFETs has been implemented in a technology computer-aided design (TCAD) simulator. This model is based on a description of the quasi-ballistic mobility through a dynamical description of the mean free path. The model has been validated by comparison with experimental data and Monte Carlo simulation. In addition, several circuit elements (CMOS inverter, powerless XOR gate, and ring oscillator) have been simulated in the TCAD environment, illustrating the impact of ballistic and quasi-ballistic transport on static and transient performances at the circuit level.

[1]  G. Le Carval,et al.  Experimental determination of the channel backscattering coefficient on 10–70 nm-metal-gate Double-Gate transistors , 2007 .

[2]  Mark Lundstrom,et al.  Drift-diffusion equation for ballistic transport in nanoscale metal-oxide-semiconductor field effect transistors , 2002 .

[3]  O. Faynot,et al.  Strained FDSOI CMOS technology scalability down to 2.5nm film thickness and 18nm gate length with a TiN/HfO2 gate stack , 2007, 2007 IEEE International Electron Devices Meeting.

[4]  J. P. McKelvey,et al.  Flux Methods for the Analysis of Transport Problems in Semiconductors in the Presence of Electric Fields , 1965 .

[5]  W. Shockley,et al.  Diffusion and Drift of Minority Carriers in Semiconductors for Comparable Capture and Scattering Mean Free Paths , 1962 .

[6]  S. Ulloa,et al.  Crossover from diffusive to quasi-ballistic transport , 2007 .

[7]  M. Lundstrom.  Fundamentals of carrier transport , 1990 .

[8]  D. Pulfrey,et al.  An appraisal of the one-flux method for treating carrier transport in modern semiconductor devices , 1996 .

[9]  T. Skotnicki,et al.  A new backscattering model giving a description of the quasi-ballistic transport in nano-MOSFET , 2005, IEEE Transactions on Electron Devices.

[10]  Yuke Wang,et al.  New 4-transistor XOR and XNOR designs , 2000, Proceedings of Second IEEE Asia Pacific Conference on ASICs. AP-ASIC 2000 (Cat. No.00EX434).

[11]  Yingtao Jiang,et al.  Design and analysis of low-power 10-transistor full adders using novel XOR-XNOR gates , 2002 .

[12]  P. Dollfus,et al.  On the ballistic transport in nanometer-scaled DG MOSFETs , 2003, IEEE Transactions on Electron Devices.

[13]  Z. Ren,et al.  A numerical study of ballistic transport in a nanoscale MOSFET , 2002 .

[14]  Mark S. Lundstrom.  Elementary scattering theory of the Si MOSFET , 1997, IEEE Electron Device Letters.

[15]  M. Shur,et al.  Low ballistic mobility in submicron HEMTs , 2002, IEEE Electron Device Letters.

[16]  Z. Ren.  Nanoscale MOSFETS: Physics, Simulation and Design , 2006 .

[17]  Massimo Vanzi,et al.  A physically based mobility model for numerical simulation of nonplanar devices , 1988, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..

[18]  S. Datta.  Electronic transport in mesoscopic systems , 1995 .

[19]  Chih-Sheng Chang,et al.  Temperature dependent channel backscattering coefficients in nanoscale MOSFETs , 2002, Digest. International Electron Devices Meeting,.

[20]  Fokker–Planck approach to extending the one-flux method of carrier transport in semiconductors to variable energies , 2003 .

[21]  R. L. Longini,et al.  Alternative Approach to the Solution of Added Carrier Transport Problems in Semiconductors , 1961 .

[22]  D. Antoniadis,et al.  On experimental determination of carrier velocity in deeply scaled NMOS: how close to the thermal limit? , 2001, IEEE Electron Device Letters.

[23]  S. Selberherr,et al.  A review of hydrodynamic and energy-transport models for semiconductor device simulation , 2003, Proc. IEEE.

[24]  M. Lundstrom,et al.  Essential physics of carrier transport in nanoscale MOSFETs , 2002 .

[25]  S. Datta,et al.  Performance limits of silicon MOSFET's , 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).

[26]  K. Natori.  Ballistic metal-oxide-semiconductor field effect transistor , 1994 .