A new SOI monolithic capacitive sensor for absolute and differential pressure measurements

In the present work, a new monolithic capacitive pressure sensor is being introduced. The sensor is manufactured according to a custom, 15-step SOI process. The process primarily offers great flexibility as far as sensor design is concerned. Absolute or differential pressure sensing is possible by simply arranging proper sensor package. Measurement sensitivity and span are easily regulated over a wide range of values by setting one-single design parameter. Attention is paid to avoid p–n junction formation in order to improve the sensor robustness against temperature increase and allow high-temperature post-processing without doping profile degradation. The presented design allows the implementation of an ordinary p-well CMOS post-process. Sensitivity of 2 mV/kPa, within a span of 180 kPa (2%) and a bandwidth of 25 kHz, is achievable by means of a CMOS switched-capacitor ASIC that is developed and presented here. Significant care has been taken for the ASIC performance to depend as less as possible on CMOS process and transistor-parameter variations that increase due to poor uniformity of the transistor substrate. Moreover, a state-of-the-art design is implemented for the circuit to provide robustness against parasitic capacitance s connected in parallel with sensing capacitors. Implementation of additional analog signal processing improves the aforementioned accuracy at a significant extend. The sensors main applications include medical devices such as sphygmomanometers and respirators that require high reliability and biocompatibility. © 2005 Elsevier B.V. All rights reserved.

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