Optical investigation of atomic steps in ultrathin InGaAs/InP quantum wells grown by vapor levitation epitaxy

Ultrathin InGaAs/InP single quantum well structures, grown by chloride transport vapor levitation epitaxy, have been investigated by low‐temperature photoluminescence (PL). Well‐resolved multiple peaks are observed in the PL spectra, instead of an expected single peak. We attribute this to monolayer (a0/2=2.93 A) variations in quantum well (QW) thickness. Separate peak positions for QW thicknesses corresponding to 2–6 monolayers have been determined, providing an unambiguous thickness calibration for spectral shifts due to quantum confinement. The PL peak corresponding to two monolayers occurs at 1.314 eV, corresponding to an energy shift of 524 meV. Experimental data agree very well with a simple effective mass theory.

[1]  Gerald B. Stringfellow,et al.  Atomic steps in thin GaInAs/lnP quantum‐well structures grown by organometallic vapor phase epitaxy , 1988 .

[2]  J. Fouquet,et al.  Structural and photoluminescent properties of GaInAs quantum wells with InP barriers grown by organometallic vapor phase epitaxy , 1987 .

[3]  C. Tu,et al.  Dynamics of exciton transfer between monolayer‐flat islands in single quantum wells , 1987 .

[4]  A. M. Sergent,et al.  Measurement of heterojunction band offsets by admittance spectroscopy: InP/Ga0.47In0.53As , 1987 .

[5]  H. Sakaki,et al.  Atomistic models of interface structures of GaAs-AlxGa1−xAs (x = 0.2−1) quantum wells grown by interrupted and uninterrupted MBE , 1987 .

[6]  M. S. Skolnick,et al.  Growth and characterisation of quantum wells and selectively doped heterostructures of InP/Ga0.47In0.53As grown by solid source MBE , 1987 .

[7]  V. G. Keramidas,et al.  Vapor levitation epitaxy: system design and performance , 1986 .

[8]  U. Koren,et al.  High quality narrow GaInAs/InP quantum wells grown by atmospheric organometallic vapor phase epitaxy , 1986 .

[9]  S. Chu,et al.  Optical properties of very thin GaInAs(P)/InP quantum wells grown by gas source molecular beam epitaxy , 1986 .

[10]  W. Tsang,et al.  Extremely high quality Ga0.47In0.53As/InP quantum wells grown by chemical beam epitaxy , 1986 .

[11]  H. Cox,et al.  Vapor levitation epitaxy: A new concept in epitaxial crystal growth , 1984 .

[12]  Henryk Temkin,et al.  Quantum well structures of In0.53Ga0.47As/InP grown by hydride vapor phase epitaxy in a multiple chamber reactor , 1983 .

[13]  M. Ozeki,et al.  Optical investigation of MQW system InP–InGaAs–InP , 1983 .

[14]  G. D. Pettit,et al.  Exciton Absorption and Emission in InP , 1964 .

[15]  V. S. Vavilov.  RADIATIVE RECOMBINATION IN SEMICONDUCTORS , 1959 .

[16]  J. L. Lopes.  Fondements de la physique atomique , 1967 .