GaAsP nanowires containing intentional and self-forming quantum dots

GaAsP nanowires (NWs) containing a range of different heterostructures are shown to be a highly promising system for the fabrication of efficient and novel ultra-small light emitters. NWs containing GaAs radial quantum wells (QWs) have emission with high thermal stability, due to both large electron and hole confinement potentials. A structure containing three QWs exhibits very low threshold lasing at low temperatures. Within the GaAsP central region of the same NW, the formation of quantum wires (QWRs) on three of the six vertices is observed, these QWRs are aligned parallel to the NW axis. The presence of twins causes a 180° rotation of the crystal about the growth axis, breaking the QWRs into short sections which may act as quantum dots (QDs). Optical studies of the NWs support the formation of optically active QWRs and QDs. In a second type of NW, during growth of the GaAsP NW core the introduction of a short GaAs section forms a QD. The inclusion of up to 50 QDs with high structural and optical quality is shown to be possible; indicating the potential for the fabrication of QD lasers. A structure with only one QD exhibits a single sharp emission line and behavior consistent with single exciton recombination. The addition of passivation layers, grown as a shell on the NW core, is shown to be essential in obtaining good optical properties. Our studies hence demonstrate that GaAsP-GaAs NWs containing heterostructures have significant potential for a range of novel light emitting applications.

[1]  Yong Ding,et al.  Multi-quantum-well nanowire heterostructures for wavelength-controlled lasers. , 2008, Nature materials.

[2]  Thomas F. Krauss,et al.  Charged and neutral exciton complexes in individual self-assembled In(Ga)As quantum dots , 2001 .

[3]  Huiyun Liu,et al.  Influence of Droplet Size on the Growth of Self-Catalyzed Ternary GaAsP Nanowires. , 2016, Nano letters.

[4]  Xiangfeng Duan,et al.  Highly Polarized Photoluminescence and Photodetection from Single Indium Phosphide Nanowires , 2001, Science.

[5]  Pallab Bhattacharya,et al.  Monolithic electrically injected nanowire array edge-emitting laser on (001) silicon. , 2014, Nano letters.

[6]  Huiyun Liu,et al.  Growth of Pure Zinc-Blende GaAs(P) Core-Shell Nanowires with Highly Regular Morphology. , 2017, Nano letters.

[7]  Yasuhiko Arakawa,et al.  Room-temperature lasing in a single nanowire with quantum dots , 2015 .

[8]  L. Lauhon,et al.  Tuning Lasing Emission toward Long Wavelengths in GaAs-(In,Al)GaAs Core-Multishell Nanowires. , 2018, Nano letters.

[9]  Huiyun Liu,et al.  Self-Formed Quantum Wires and Dots in GaAsP–GaAsP Core–Shell Nanowires , 2019, Nano letters.

[10]  Xiang Zhou,et al.  A review of MBE grown 0D, 1D and 2D quantum structures in a nanowire , 2013 .

[11]  Chennupati Jagadish,et al.  Large-Scale Statistics for Threshold Optimization of Optically Pumped Nanowire Lasers. , 2017, Nano letters.

[12]  C. Lieber,et al.  Nanowire Nanosensors for Highly Sensitive and Selective Detection of Biological and Chemical Species , 2001, Science.

[13]  G. Abstreiter,et al.  Crystal Phase Quantum Dots in the Ultrathin Core of GaAs-AlGaAs Core-Shell Nanowires. , 2015, Nano letters.

[14]  Y. Ota,et al.  Highly uniform, multi-stacked InGaAs/GaAs quantum dots embedded in a GaAs nanowire , 2014 .

[15]  P. Yang.  Nanowire Photonics , 2007, 2007 International Nano-Optoelectronics Workshop.

[16]  Martin Heiss,et al.  Quantum dot opto-mechanics in a fully self-assembled nanowire. , 2014, Nano letters.

[17]  Huiyun Liu,et al.  Self-catalyzed ternary core-shell GaAsP nanowire arrays grown on patterned Si substrates by molecular beam epitaxy. , 2014, Nano letters.

[18]  Dan Dalacu,et al.  Observation of strongly entangled photon pairs from a nanowire quantum dot , 2014, Nature Communications.

[19]  Zhichuan Niu,et al.  Self-assembled semiconductor quantum dots decorating the facets of GaAs nanowire for single-photon emission , 2017 .

[20]  L. Lauhon,et al.  Alloy Fluctuations Act as Quantum Dot-like Emitters in GaAs-AlGaAs Core-Shell Nanowires. , 2015, ACS nano.

[21]  Dhruv Saxena,et al.  Highly Strained III–V–V Coaxial Nanowire Quantum Wells with Strong Carrier Confinement , 2019, ACS nano.

[22]  Huiyun Liu,et al.  III–V nanowires and nanowire optoelectronic devices , 2015 .

[23]  Z. Mi,et al.  Ultralow-threshold electrically injected AlGaN nanowire ultraviolet lasers on Si operating at low temperature. , 2015, Nature nanotechnology.

[24]  A Gustafsson,et al.  Self-assembled quantum dots in a nanowire system for quantum photonics. , 2013, Nature materials.

[25]  P. Vogl,et al.  nextnano: General Purpose 3-D Simulations , 2007, IEEE Transactions on Electron Devices.

[26]  Xin Yan,et al.  Low-threshold room-temperature AlGaAs/GaAs nanowire/single-quantum-well heterostructure laser , 2017 .

[27]  Hong Wang,et al.  Self‐Assembled Quantum Dot Structures in a Hexagonal Nanowire for Quantum Photonics , 2014, Advanced materials.

[28]  M. Eickhoff,et al.  Self-assembled GaN quantum wires on GaN/AlN nanowire templates. , 2012, Nanoscale.

[29]  C. Bougerol,et al.  Ultrafast room temperature single-photon source from nanowire-quantum dots. , 2012, Nano letters.