The effect of the intense laser field on the electronic states and optical properties of n-type double δ-doped GaAs quantum wells

[1]  H. M. Baghramyan,et al.  Impurity-related nonlinear optical properties in delta-doped quantum rings: Electric field effects , 2014 .

[2]  A. Radu,et al.  Tuning a conventional quantum well laser by nonresonant laser field dressing of the active layer , 2014 .

[3]  C. Duque,et al.  The effects of the electric and magnetic fields on the nonlinear optical properties in the step-like asymmetric quantum well , 2014 .

[4]  A. Radu,et al.  Laser-dressed donor states in a CdS/SiO2 spherical nanodot under applied electric fields , 2014 .

[5]  J. C. Martínez-Orozco,et al.  Asymmetric GaAs n-type double δ-doped quantum wells as a source of intersubband-related nonlinear optical response: Effects of an applied electric field , 2014 .

[6]  A. Erol,et al.  Effects of indium and nitrogen mole concentrations on the optical properties in a GaInNas/GaAs quantum well under the intense laser field , 2013 .

[7]  I. Sokmen,et al.  Effects of applied electromagnetic fields on the linear and nonlinear optical properties in an inverse parabolic quantum well , 2012 .

[8]  A. Terzis,et al.  Linear and nonlinear optical absorption coefficients in inverse parabolic quantum wells under static external electric field , 2011, The European Physical Journal B.

[9]  Jeng-Chung Chen,et al.  A delta-doped quantum well system with additional modulation doping , 2011, Nanoscale research letters.

[10]  H. Ohta,et al.  Enhancing the Electron Mobility via Delta-Doping in SrTiO3 , 2010, 1011.0159.

[11]  W. Xie,et al.  Optical absorption of a hydrogenic impurity in a disc-shaped quantum dot , 2010 .

[12]  W. Xie.  Effect of an electric field and nonlinear optical rectification of confined excitons in quantum dots , 2009 .

[13]  A. Radu,et al.  Laser effects on the donor states in V-shaped and inverse V-shaped quantum wells , 2009 .

[14]  L. Gaggero-Sager,et al.  Effect of the hydrostatic pressure on two-dimensional transport in delta-doped systems , 2009 .

[15]  E. Niculescu,et al.  Simultaneous effects of pressure and laser field on donors in GaAs/Ga1−xAlxAs quantum wells , 2009 .

[16]  M. A. Amato,et al.  Unexpected transition from single to double quantum well potential induced by intense laser fields in a semiconductor quantum well , 2009 .

[17]  F. E. López,et al.  Laser-dressing effects on the electron g factor in low-dimensional semiconductor systems under applied magnetic fields , 2009 .

[18]  A. Terzis,et al.  Binding energy of hydrogenic impurity states in an inverse parabolic quantum well under static external fields , 2009 .

[19]  A. Radu,et al.  Polarizabilities of shallow donors in inverse V-shaped quantum wells under laser field , 2009 .

[20]  A. Radu,et al.  Density of impurity states of shallow donors in a quantum well under intense laser field , 2008 .

[21]  M. Tomak,et al.  Intersubband resonant enhancement of the nonlinear optical properties in compositionally asymmetric and interdiffused quantum wells , 2008 .

[22]  A. Terzis,et al.  Binding energy of hydrogenic impurity states in an inverse parabolic quantum well under electric field , 2008 .

[23]  A. Terzis,et al.  Electronic structure and nonlinear optical rectification in a quantum dot: effects of impurities and external electric field , 2007 .

[24]  M. Tomak,et al.  Linear and nonlinear intersubband optical absorptions in an asymmetric rectangular quantum well , 2007 .

[25]  I. Karabulut,et al.  Linear and nonlinear intersubband optical absorption coefficients and refractive index changes in a quantum box with finite confining potential , 2006 .

[26]  I. Karabulut,et al.  Nonlinear optical rectification in semiparabolic quantum wells with an applied electric field , 2005 .

[27]  E. Schubert,et al.  Delta-Doping of Semiconductors , 2005 .

[28]  I. Sokmen,et al.  Shallow donor impurity binding energy in the V-shaped quantum well under the crossed electric and magnetic fields , 2005 .

[29]  Luiz E. Oliveira,et al.  Laser effects on donor states in low-dimensional semiconductor heterostructures , 2004 .

[30]  Chien-Ping Lee,et al.  Transport and Optical Studies of the D¡ -Conduction Band in Doped GaAs/AlGaAs Quantum Wells , 2001 .

[31]  Luiz E. Oliveira,et al.  Laser dressing effects in low-dimensional semiconductor systems , 2000 .

[32]  Luiz E. Oliveira,et al.  Interaction of a Laser Field with a Semiconductor System: Application to Shallow-Impurity Levels of Quantum Wells , 1998 .

[33]  Chau-Hwang Lee,et al.  Magnetic-field-induced delocalization in center-doped G a A s / A l x Ga 1 − x As multiple quantum wells , 1998 .

[34]  A. Fonseca,et al.  Laser-dressed binding energy of a hydrogen impurity in the GaAs/AlxGa1 − xAs nanostructure in the presence of a static electric field☆ , 1998 .

[35]  Y. H. Chang,et al.  Magnetic-field-induced insulator-quantum Hall conductor-insulator transitions in doped GaAs/Al x Ga 1-x As quantum wells , 1997 .

[36]  A. Fonseca,et al.  Intense field effects on hydrogen impurities in quantum dots , 1997 .

[37]  M. Helm,et al.  Direct observation of the LO phonon bottleneck in wide GaAs/AlxGa1-xAs quantum wells , 1997 .

[38]  B. Brar,et al.  Interband impact ionization by terahertz illumination of InAs heterostructures , 1996 .

[39]  Fonseca,et al.  Hydrogenic impurities in a quantum well wire in intense, high-frequency laser fields. , 1996, Physical review. B, Condensed matter.

[40]  Walker,et al.  Direct observation of magnetophonon resonances in Landau-level lifetimes of a semiconductor heterostructure. , 1996, Physical review. B, Condensed matter.

[41]  R. Pérez-Álvarez,et al.  A simple model for delta‐doped field‐effect transistor electronic states , 1995 .

[42]  S. Min,et al.  Magnetotransport and electric subband studies of Si-delta-doped Al0.27Ga0.73As/GaAs single quantum wells grown by metalorganic chemical vapour deposition , 1995 .

[43]  Sham,et al.  Theory of the electronic properties of delta -doped layers with DX centers in semiconductor heterostructures. , 1993, Physical review. B, Condensed matter.

[44]  R. Walle,et al.  ON THE RELATIONSHIP BETWEEN INTERFACIAL DEFECTS AND SCHOTTKY-BARRIER HEIGHT IN AG, AU, AND AL/N-GAAS CONTACTS. , 1993 .

[45]  Y. Kim,et al.  Properties of center and edge δ‐doped GaAs‐AlGaAs quantum wells grown by metalorganic chemical vapor deposition , 1993 .

[46]  K. Ploog,et al.  Fermi edge singularity and screening effects in the absorption and luminescence spectrum of Si δ‐doped GaAs , 1991 .

[47]  K. Ploog,et al.  Effect of spatial localization of dopant atoms on the spacing of electron subbands in δ-doped GaAs:Si , 1991 .

[48]  D. C. Liou,et al.  Delta‐doped quantum well structures grown by molecular beam epitaxy , 1990 .

[49]  Ioriatti.  Thomas-Fermi theory of delta -doped semiconductor structures: Exact analytical results in the high-density limit. , 1990, Physical review. B, Condensed matter.

[50]  Valadares Ec.  Resonant tunneling in double-barrier heterostructures tunable by long-wavelength radiation. , 1990 .

[51]  F. Ehlotzky.  Positronium decay in intense high frequency laser fields , 1988 .

[52]  K. Ploog,et al.  Schottky-barrier tunneling spectroscopy for the electronic subbands of a δ-doping layer , 1986 .

[53]  A. Fischer,et al.  The delta-doped field-effect transistor (δFET) , 1986, IEEE Transactions on Electron Devices.

[54]  K. Ploog,et al.  The δ-Doped Field-Effect Transistor , 1985 .

[55]  J. Kamiński,et al.  Free-free transitions in intense high-frequency laser fields , 1984 .

[56]  G. Döhler.  Ultrathin doping layers as a model for 2D systems , 1978 .

[57]  W. Henneberger.  Perturbation Method for Atoms in Intense Light Beams , 1968 .