Cross-Sections, Rate Constants and Transport Coefficients in Silane Plasma Chemistry

This paper presents a critical review of the basic data concerning the physics and chemistry of low pressure SiH 4 glow discharges used to deposit hydrogenated amorphous silicon films (a-Si:H). Starting with an updated table of thermochemical data, we analyze the gas-phase elementary processes consisting of i) electron-molecule collisions, ii) ion-molecule collisions, iii) neutral-neutral collisions, iv) other electron and ion collisions involving electron-ion and ion-ion recombination, electron attachment on radicals and detachment of anions, and v) cluster growth kinetics in dusty plasmas. Experimental data or theoretical estimates are given and discussed in terms of cross-sections. collision and reaction rate constants, and transport coefficients. We also analyze the surface processes and reaction probabilities of ions, radicals and molecules.

[1]  A. Howling,et al.  TIME-RESOLVED MEASUREMENTS OF HIGHLY POLYMERIZED NEGATIVE IONS IN RADIO FREQUENCY SILANE PLASMA DEPOSITION EXPERIMENTS , 1994 .

[2]  W. C. Lineberger,et al.  Photoelectron spectra of dicarbon(1-) and ethynyl(1-) , 1991 .

[3]  M. Bowers,et al.  Ion-polar molecule collisions. A modification of the average dipole orientation theory: The cos θ model , 1975 .

[4]  Antonio Laganà,et al.  From dynamics to modeling of plasma complex systems: negative ion (H-) sources , 1992 .

[5]  M. Kushner,et al.  Simulation of the bulk and surface properties of amorphous hydrogenated silicon deposited from silane plasmas , 1989 .

[6]  C. M. Ferreira,et al.  Electron and vibrational kinetics in the hydrogen positive column , 1989 .

[7]  Y. Nakamura,et al.  Electron swarm parameters in SiH/sub 4/-rare gas mixtures and collision cross sections for monosilane molecules , 1991 .

[8]  L. Curtiss,et al.  Theoretical study of Si2Hn (n=0–6) and Si2H+n (n=0–7): Appearance potentials, ionization potentials, and enthalpies of formation , 1991 .

[9]  M. L. Mandich,et al.  Sequential reactions of SiD+2 with SiD4 , 1992 .

[10]  M. L. Mandich,et al.  Sequential reactions of bare silicon clusters with SiD4: Constrained heterogeneous nucleation of deuterated silicon particles , 1989 .

[11]  J. Perrin,et al.  Positive and negative ions in silane and disilane multipole discharges , 1984 .

[12]  M. Gordon,et al.  Theoretical studies of the reactions XHn→XHn−1−+H+ and XHn−1−+SiH4→[SiH4XHn−1]− , 1986 .

[13]  W. Bailey,et al.  Electron kinetics of silane discharges , 1983 .

[14]  M. Capitelli,et al.  A joint vibro-electronic mechanism in the dissociation of molecular hydrogen in nonequilibrium plasmas , 1978 .

[15]  T. Miller,et al.  Mutual neutralization of simple and clustered positive and negative ions , 1978 .

[16]  J. Perrin,et al.  Translational energy distribution of excited hydrogen atoms produced by 0–100 eV electron impact dissociation of SiH4 and GeH4 , 1984 .

[17]  Joseph T. Verdeyen,et al.  Modulated discharges: Effect on plasma parameters and deposition , 1990 .

[18]  M. Suto,et al.  Quantitative photoexcitation study of SiH4 in vacuum ultraviolet , 1986 .

[19]  J. Jasinski,et al.  Absolute rate constants for the reaction of silylene with hydrogen, silane, and disilane , 1988 .

[20]  K. Gingerich,et al.  Atomization enthalpy and enthalpy of formation of gaseous Si4 from mass spectrometric equilibrium measurements , 1993 .

[21]  M. Kushner.  A phenomenological model for surface deposition kinetics during plasma and sputter deposition of amorphous hydrogenated silicon , 1987 .

[22]  A. Sax,et al.  Theoretical enthalpies of formation for small silicon hydrides , 1991 .

[23]  I. Walker,et al.  Low-energy-electron collision cross-sections in silane , 1987 .

[24]  M. Tsuji,et al.  DISSOCIATIVE EXCITATION OF CH4 BY COLLISIONS WITH HELIUM ACTIVE SPECIES , 1989 .

[25]  K. Tachibana,et al.  A Study on Radical Fluxes in Silane Plasma CVD from Trench Coverage Analysis , 1989 .

[26]  Robert J. Kee,et al.  A Mathematical Model of Silicon Chemical Vapor Deposition Further Refinements and the Effects of Thermal Diffusion , 1986 .

[27]  Hiroshi Tanaka,et al.  Elastic and vibrational differential cross sections for collisions of low- and intermediate-energy electrons with silane , 1990 .

[28]  George Gioumousis,et al.  Reactions of Gaseous Molecule Ions with Gaseous Molecules. V. Theory , 1958 .

[29]  F. W. Lampe,et al.  Ion-molecule reactions in disilane , 1974 .

[30]  R. Gerber.  Molecular scattering from surfaces: theoretical methods and results , 1987 .

[31]  M. Higo,et al.  Electron impact dissociation of molecular hydrogen and deuterium: Translational energy distribution of atomic hydrogen and deuterium (n = 3,4,5) , 1982 .

[32]  K. Raghavachari,et al.  Electronic structures of the negative ions Si−2 –Si−10: Electron affinities of small silicon clusters , 1991 .

[33]  C. Fleddermann,et al.  Measurement of the Electron Density and the Attachment Rate Coefficient in Silane/helium Discharges , 1985 .

[34]  K. Gleason,et al.  Monte Carlo simulations of amorphous hydrogenated silicon thin‐film growth , 1987 .

[35]  A. P. Hickman.  Approximate scaling formula for ion–ion mutual neutralization rates , 1979 .

[36]  P. Gaspar,et al.  Ion‐Molecule Reactions in Silane , 1972 .

[37]  M. Gordon,et al.  Experimental and theoretical evidence in support of an intermediate complex in the insertion reaction of silylene into silane , 1992 .

[38]  E. R. Austin,et al.  Rate constants for the reactions of hydrogen atoms with some silanes and germanes , 1977 .

[39]  M. Capitelli,et al.  Electron kinetics in a collision-dominated SiH4 rf plasma including self-consistent rf field strength calculation , 1990 .

[40]  M. Koshi,et al.  Rate constant and mechanism of the SiH3+SiH3 reaction , 1991 .

[41]  J. Perrin,et al.  Rotational energy transfer on a hot surface in a low-pressure flow studied by CARS , 1991 .

[42]  W. Breiland,et al.  Laser studies of the reactivity of SiH with the surface of a depositing film , 1989 .

[43]  J. Ducuing,et al.  Vibrational relaxation of H2 in the range 500–40°K , 1974 .

[44]  J. Perrin,et al.  High resolution absorption and emission spectroscopy of a silane plasma in the 1800–2300 cm−1 range , 1982 .

[45]  J. Tossell,et al.  Electron scattering cross sections and negative ion states of silane and halide derivatives of silane , 1989 .

[46]  H. Toyoda,et al.  Electron-Impact Dissociation of Methane into CH3 and CH2 Radicals I. Relative Cross Sections , 1991 .

[47]  Richard E. Smalley,et al.  Ultraviolet photoelectron spectroscopy of semiconductor clusters: Silicon and germanium , 1987 .

[48]  Robert J. Kee,et al.  A Mathematical Model of the Fluid Mechanics and Gas‐Phase Chemistry in a Rotating Disk Chemical Vapor Deposition Reactor , 1989 .

[49]  G. Flynn,et al.  Effects of translational energy and moderators on vibrational excitation of carbon dioxide by hot hydrogen atoms , 1985 .

[50]  M. Nimlos,et al.  Photoelectron Spectroscopy of SiH3- and SiD3- , 1986 .

[51]  C. Moore.  Vibration—Rotation Energy Transfer , 1965 .

[52]  M. L. Mandich,et al.  Sequential reactions of SiD0–3+ and Si2D0–6+ with disilane , 1992 .

[53]  D. Hollenbach,et al.  The gas-grain interaction in the interstellar medium - Thermal accommodation and trapping , 1983 .

[54]  A. Tserepi,et al.  Two‐photon absorption laser‐induced fluorescence of H atoms: A probe for heterogeneous processes in hydrogen plasmas , 1994 .

[55]  M. Tsuji,et al.  Dissociative excitation of SiH4 by collisions with metastable argon atoms , 1989 .

[56]  J. Jasinski,et al.  Absolute rate constants for the reaction of SiH with hydrogen, deuterium and silane , 1989 .

[57]  V. Kempter,et al.  Ionic reactions in monosilane. Radiation chemistry implications , 1972 .

[58]  Ken'ichiro Tanaka,et al.  Absolute measurements of photoabsorption cross sections, photoionization cross sections, and photoionization quantum yields of silane in the 13–40 eV region , 1991 .

[59]  P. Ho,et al.  Theoretical study of the thermochemistry of fluorosilanes (SiFn and SiHnFm) compounds and hexafluorodisilane , 1990 .

[60]  G. Flynn,et al.  Hot Atoms Revisited: Laser Photolysis and Product Detection , 1986 .

[61]  Robert J. Kee,et al.  A Mathematical Model of the Coupled Fluid Mechanics and Chemical Kinetics in a Chemical Vapor Deposition Reactor , 1984 .

[62]  J. Berkowitz,et al.  Photoionization mass spectrometric studies of SiH/sub n/ (n = 1--4) , 1987 .

[63]  L. Christophorou.  Negative ions of polyatomic molecules. , 1980, Environmental health perspectives.

[64]  M. Capitelli,et al.  On the modulation of electron energy distribution function in radiofrequency SiH4, SiH4−H2 bulk plasmas , 1988 .

[65]  T. Kitsopoulos,et al.  Vibrationally resolved photoelectron spectra of Si−3 and Si−4 , 1990 .

[66]  F. Comes,et al.  Role of silylene in the deposition of hydrogenated amorphous silicon , 1991 .

[67]  F. Crim,et al.  The vacuum ultraviolet photodissociation of silane at 125.1 nm , 1993 .

[68]  J. Perrin,et al.  Dissociative excitation of SiH4, SiD4, Si2H6 and GeH4 by 0–100 eV electron impact , 1983 .

[69]  J. Baggott,et al.  Absolute rate constants for the gas-phase reactions of silylene with silane, disilane and the methylsilanes , 1990 .

[70]  R. Forrest,et al.  Measurements of detachment from F- by electron impact tests of classical scaling for electron impact detachment cross sections , 1979 .

[71]  F. W. Lampe,et al.  The 147-nm photolysis of monosilane , 1979 .

[72]  K. Tachibana,et al.  On the Reaction Kinetics in a Mercury Photosensitized CVD of a-Si:H Films , 1987 .

[73]  R. Robertson,et al.  Total and partial electron collisional ionization cross sections for CH4, C2H6, SiH4, and Si2H6 , 1984 .

[74]  M. L. Mandich,et al.  Reactive etching of positive and negative silicon cluster ions by nitrogen dioxide , 1987 .

[75]  Yoshiharu Nakamura,et al.  Electron swarm parameters in SiH4-Ar mixtures , 1988 .

[76]  Krishnan Raghavachari,et al.  Bonding and stabilities of small silicon clusters: A theoretical study of Si7–Si10 , 1988 .

[77]  A. Matsuda,et al.  SURFACE REACTIONS DURING THE A-SI : H GROWTH IN THE DIODE AND TRIODE GLOW-DISCHARGE REACTORS , 1991 .

[78]  Mark J. Kushner,et al.  A model for the discharge kinetics and plasma chemistry during plasma enhanced chemical vapor deposition of amorphous silicon , 1988 .

[79]  A. Catherinot,et al.  Deposition of silicon nitride thin films by reaction of SiH4 in a nitrogen post-discharge , 1990 .

[80]  S. Vepřek,et al.  Possible contribution of SiH2 and SiH3 in the plasma‐induced deposition of amorphous silicon from silane , 1990 .

[81]  J. Boeuf,et al.  Transition from a capacitive to a resistive regime in a silane radio frequency discharge and its possible relation to powder formation , 1992 .

[82]  P. Haaland.  Dissociative attachment in silane , 1990 .

[83]  M. Kushner.  Simulation of the gas‐phase processes in remote‐plasma‐activated chemical‐vapor deposition of silicon dielectrics using rare gas–silane‐ammonia mixtures , 1992 .

[84]  A. Gallagher,et al.  Silane dissociation products in deposition discharges , 1990 .

[85]  A. Matsuda,et al.  Spatial Distribution of SiH3 Radicals in RF Silane Plasma , 1990 .

[86]  J. Perrin,et al.  Ion drag and plasma-induced thermophoresis on particles in radiofrequency glow discharges , 1994 .

[87]  H. Bock,et al.  PHOTOELECTRON SPECTRA AND MOLECULAR PROPERTIES. LI. IONIZATION POTENTIALS OF SILANES SINH2N+2 , 1976 .

[88]  J. Berkowitz,et al.  Photoionization mass spectrometric study of CSe2 , 1977 .

[89]  P. Gaspar,et al.  Endothermic ion‐molecule reactions in silane , 1973 .

[90]  M. L. Mandich,et al.  H/D isotope exchange reaction of SiH+3 with SiD4 and SiD+3 with SiH4: Evidence for hydride stripping reaction , 1990 .

[91]  M. Yoshino,et al.  Cross Sections and Related Data for Electron Collisions with Hydrogen Molecules and Molecular Ions , 1990 .

[92]  J. Perrin,et al.  Dissociation cross sections of silane and disilane by electron impact , 1982 .

[93]  B. Ruscic,et al.  Photoionization Mass Spectrometric Studies of the Transient Species Si, H, (n = 2-5) , 2022 .

[94]  Gallagher,et al.  Causes of SiH4 dissociation in silane dc discharges. , 1990, Physical review. A, Atomic, molecular, and optical physics.

[95]  J. Berkowitz.  Photoionization mass spectrometric studies of AsHn (n=1–3) , 1987 .

[96]  A. Gallagher,et al.  Ion chemistry in silane dc discharges , 1985 .

[97]  Klavs F. Jensen,et al.  Rice-Ramsperger-Kassel-Marcus theoretical prediction of high-pressure Arrhenius parameters by nonlinear regression: application to silane and disilane decomposition , 1987 .

[98]  T. Kitsopoulos,et al.  Reassignment of the Si−2 photodetachment spectra , 1993 .

[99]  J. Perrin.  Modelling of the power dissipation and rovibrational heating and cooling in SiH4-H2 RF glow discharges , 1993 .

[100]  Richard G. Miller,et al.  V–V energy transfer in H2‐additive gas mixtures using a stimulated Raman vibrational fluorescence technique , 1977 .

[101]  A. Phelps.  Cross Sections and Swarm Coefficients for H+, H2+, H3+, H, H2, and H− in H2 for Energies from 0.1 eV to 10 keV , 1990 .

[102]  J. Perrin,et al.  Possible routes for cluster growth and particle formation in RF silane discharges , 1994 .

[103]  J. Perrin,et al.  Mass spectrometry detection of radicals in SiH4-CH4-H2 glow discharge plasmas , 1995 .

[104]  P. Ranson,et al.  Study of volume and surface processes in low pressure radio frequency plasma reactors by pulsed excitation methods. I. Hydrogen–argon plasma , 1991 .

[105]  J. Perrin,et al.  Sticking and recombination of the SiH3 radical on hydrogenated amorphous silicon: The catalytic effect of diborane , 1989 .

[106]  S. Gates,et al.  Kinetics of surface reactions in very low‐pressure chemical vapor deposition of Si from SiH4 , 1991 .

[107]  M. Kushner.  Mechanisms for Power Deposition in Ar/SiH4 Capacitively Coupled RF Discharges , 1986, IEEE Transactions on Plasma Science.

[108]  J. Mitchell,et al.  Merged electron-ion beam experiments. IV. Dissociative recombination for the methane group CH+,...,CH5+ , 1981 .

[109]  J. Perrin,et al.  Emission spectroscopy of SiH in a silane glow-discharge , 1980 .

[110]  F. W. Lampe,et al.  Electron impact study of ionization and dissociation of monosilane and disilane , 1969 .

[111]  R. Robertson,et al.  Reaction mechanism and kinetics of silane pyrolysis on a hydrogenated amorphous silicon surface , 1986 .

[112]  J. Perrin,et al.  Temperature dependence of the sticking and loss probabilities of silyl radicals on hydrogenated amorphous silicon , 1990 .

[113]  A. Hitchcock,et al.  Low-energy electron scattering by silane (SiH4) , 1989 .

[114]  J. Perrin,et al.  Emission cross sections from fragments produced by electron impact on silane , 1982 .

[115]  L. Christophorou,et al.  Electron attachment to perfluorocarbon compounds. I. c‐C4F6, 2‐C4F6, 1,3‐C4F6, c‐C4F8 and 2‐C4F8 , 1979 .

[116]  Mark J. Kushner,et al.  Monte‐Carlo simulation of electron properties in rf parallel plate capacitively coupled discharges , 1983 .

[117]  P. Mul,et al.  Dissociative recombination of C2/+/, C2H/+/, C2H2/+/ and C2H3/+/ , 1980 .

[118]  I. Walker,et al.  Electron swarm characteristic energies (Dr/μ) in methane, perdeuteromethane, silane, perdeuterosilane, phosphine and hydrogen sulphide at low E/N , 1987 .

[119]  F. W. Lampe,et al.  SiH+5 and the proton affinity of monosilane☆ , 1973 .

[120]  Joseph M. Jasinski,et al.  Silicon Chemical Vapor Deposition One Step at a Time: Fundamental Studies of Silicon Hydride Chemistry , 1991 .

[121]  L. Raff,et al.  Theoretical investigations of elementary processes in the chemical vapor deposition of silicon from silane. Unimolecular decomposition of SiH4 , 1984 .

[122]  P. Potzinger,et al.  Zur Reaktion von Silylradikalen Das Verhältnis Disproportionierung/Rekombination , 1977 .

[123]  A. Gallagher,et al.  Surface reaction probability of film‐producing radicals in silane glow discharges , 1990 .

[124]  J. Bott.  Vibrational energy exchange between H2(v=1) and D2, N2, HCl, and CO2 , 1976 .

[125]  I. Iga,et al.  Dissociative attachment of electrons with Si2H6 , 1991 .

[126]  M. L. Mandich,et al.  Sequential clustering reactions of SiD+3 with SiD4 and SiH+3 with SiH4: Another case of arrested growth of hydrogenated silicon particles , 1990 .

[127]  Makoto Suzuki,et al.  Reactions of SiH2(X̄1A1) with H2, CH4, C2H4, SiH4 and Si2H6 at 298 K , 1985 .

[128]  J. Perrin,et al.  Retarding‐field analyzer for measurements of ion energy distributions and secondary electron emission coefficients in low‐pressure radio frequency discharges , 1993 .

[129]  J. Perrin,et al.  Ion‐induced secondary electron emission in SiH4 glow discharge, and temperature dependence of hydrogenated amorphous silicon deposition rate , 1993 .

[130]  W. Pollock.  Momentum transfer and vibrational cross-sections in non-polar gases , 1968 .

[131]  T. L. Cottrell,et al.  Drift velocities of slow electrons in polyatomic gases , 1965 .

[132]  A. Gallagher,et al.  Plasma chemistry in disilane discharges , 1992 .

[133]  A. Sax,et al.  Electron affinities of the XYH3 systems (X, Y=C, Si) , 1988 .

[134]  K. Reichmann,et al.  Ionizing laser intensity dependence of the silicon cluster photoionization mass spectrum , 1987 .

[135]  J. Yardley,et al.  Vibrational Deactivation in Methane Mixtures , 1970 .

[136]  M. L. Mandich,et al.  Sequential clustering reactions of Si+ with SiD4: Identification of a bottleneck preventing rapid growth of hydrogenated silicon particles , 1988 .

[137]  J. Purnell,et al.  The pyrolysis of monosilane , 1966, Proceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences.

[138]  T. Goto,et al.  Diffusion Coefficient and Reaction Rate Constant of the SiH3 Radical in Silane Plasma , 1989 .

[139]  H. Tagashira,et al.  Measurement of the ionisation and attachment coefficients in monosilane and disilane , 1986 .

[140]  O. Strausz,et al.  Photochemistry of silicon compounds. IV. Mercury photosensitization of disilane , 1973 .

[141]  Toshihiko Satō,et al.  Level excitation cross sections of Si I fragments produced by 100 eV electron impact on SiH4 , 1988 .

[142]  P. Armentrout,et al.  Kinetic energy dependence of dissociative charge-transfer reactions of He+, Ne+, Ar+, Kr+, and Xe+ with silane , 1990 .

[143]  S. Gates,et al.  Decomposition mechanisms of SiHx species on Si(100)‐(2×1) for x=2, 3, and 4 , 1990 .

[144]  J. Perrin,et al.  Production mechanism and reactivity of the SiH radical in a silane plasma , 1984 .

[145]  Z. Alfassi,et al.  On the Energy Losses of Hot Atoms Colliding with Different Molecules , 1972 .

[146]  Yoshiharu Nakamura,et al.  Electron collision cross sections for the monosilane molecule , 1989 .

[147]  T. Okada,et al.  Measurements of density, surface recombination coefficient, and diffusion coefficient of hydrogen atoms by Lα laser fluorescence spectroscopy , 1985 .

[148]  G. Millot,et al.  Rotationally mediated vibration–vibration and vibration–translation energy transfer in silane , 1989 .

[149]  J. Dutta,et al.  Diagnostics of particle genesis and growth in RF silane plasmas by ion mass spectrometry and light scattering , 1994 .

[150]  T. L. Cottrell,et al.  Transition probability in molecular encounters. Part 5.—Vibrational-rotational energy transfer , 1962 .

[151]  Seung J. Choi,et al.  The role of negative ions in the formation of particles in low‐pressure plasmas , 1993 .

[152]  R. Robertson,et al.  Reactions of He+, Ne+, and Ar+ with CH4, C2H6, SiH4, and Si2H6 , 1983 .

[153]  D. Bohme,et al.  Flowing afterglow studies at york university , 1975 .

[154]  M. L. Mandich,et al.  Water induced particle formation in the ion chemistry of silane , 1994 .

[155]  Toshihiko Satō,et al.  Emission Cross Sections of Excited Fragments Produced by 0-100 eV Electron Impact on SiH4: Application of the “He Standard” , 1986 .

[156]  J. Perrin,et al.  Spatially resolved optical emission and electrical properties of SiH4 RF discharges at 13.56 MHz in a symmetric parallel-plate configuration , 1991 .

[157]  H. Yoshida,et al.  Cross sections for deexcitation of He(2 3S, 2 1S and 2 1P) by SiH4 and GeH4 , 1991 .

[158]  W. Breiland,et al.  Reactive sticking coefficients for silane and disilane on polycrystalline silicon , 1988 .

[159]  I. Iga,et al.  Cross Sections for the Formation of Negative Ions by Electron , 1991 .

[160]  J. Jasinski,et al.  Direct kinetic studies of SiH3+SiH3, H, CCl4, SiD4, Si2H6, and C3H6 by tunable infrared diode laser spectroscopy , 1991 .

[161]  André Bouchoule,et al.  Particle nucleation and growth in a low-pressure argon-silane discharge , 1994 .

[162]  R. Walsh,et al.  Mechanism of formation of tri- and tetrasilane in the reaction of atomic hydrogen with monosilane and the thermochemistry of the disilene isomers , 1987 .

[163]  K. Shibuya,et al.  Electronic quenching and chemical reactions of SiH radicals in the gas phase , 1989 .

[164]  Boeuf,et al.  Numerical and experimental diagnostics of rf discharges in pure and dusty argon. , 1992, Physical review. A, Atomic, molecular, and optical physics.

[165]  M. Hiramatsu,et al.  Reaction rate constant of Si atoms with SiH4 molecules in a RF silane plasma , 1994 .

[166]  W. C. Lineberger,et al.  Laser photoelectron spectrometry of the negative ions of silicon and its hydrides , 1975 .

[167]  M. L. Mandich,et al.  Sequential clustering reactions of SiD+ with SiD4: Rapid growth to kinetic dead‐end structures , 1991 .

[168]  M. Kushner,et al.  Numerical investigation of the kinetics and chemistry of rf glow discharge plasmas sustained in He, N2, O2, He/N2/O2, He/CF4/O2, and SiH4/NH3 using a Monte Carlo-fluid hybrid model , 1992 .

[169]  D. Bohme,et al.  Gas-Phase sN2 Reactions at Silicon and Carbon Centers. An Experimental Appraisal of Theory , 1976 .

[170]  J. Jasinski,et al.  Absolute rate constants for the reaction of silyl with nitric oxide, ethylene, propyne, and propylene, and the silyl recombination reaction , 1990 .

[171]  Edward A. Mason,et al.  The mobility and diffusion of ions in gases , 1973 .

[172]  T. Shirafuji,et al.  Monte-Carlo Simulation of Surface Reactions in Plasma-Enhanced Chemical Vapor Deposition of Hydrogenated Amorphous Silicon Thin Films , 1993 .

[173]  S. Gates.  Adsorption kinetics of SiH4, Si2H6 and Si3H8 on the Si(111)-(7×7) surface , 1988 .

[174]  D. Feldmann.  Photoablösung von Elektronen bei Si- und NH2- , 1971 .

[175]  M. Heintze,et al.  The mechanism of plasma-induced deposition of amorphous silicon from silane , 1990 .

[176]  Boeuf.  Characteristics of a dusty nonthermal plasma from a particle-in-cell Monte Carlo simulation. , 1992, Physical review. A, Atomic, molecular, and optical physics.

[177]  A. Kono,et al.  Laser-Induced-Fluorescence Study of the SiH2 Density in RF SiH4 Plasmas with Xe, Ar, He, and H2 Dilution Gases , 1995 .

[178]  F. W. Lampe,et al.  Ion–molecule reactions in SiH4–D2 mixtures , 1977 .

[179]  S. Vepřek,et al.  Open questions regarding the mechanism of plasma-induced deposition of silicon , 1991 .