High brightness GaInAs/(Al)GaAs quantum-dot tapered lasers at 980 nm with high wavelength stability

High brightness (2 W with M2=3.4) is demonstrated at 980 nm using a gain-guided tapered GaInAs/(Al)GaAs quantum-dot laser. A remarkable low temperature shift (0.09 nm/K) of the emission wavelength is observed. Moreover, at 20 °C, the emission wavelength is quasiconstant as a function of the injected current.

[1]  S. Chinn,et al.  High-power, strained-layer amplifiers and lasers with tapered gain regions , 1993, IEEE Photonics Technology Letters.

[2]  D. Welch,et al.  Operating characteristics of a high-power monolithically integrated flared amplifier master oscillator power amplifier , 1993 .

[3]  A. Wetzel,et al.  High-brightness tapered semiconductor laser oscillators and amplifiers with low-modal gain epilayer-structures , 1998, IEEE Photonics Technology Letters.

[4]  Andreas Stintz,et al.  Extremely low room-temperature threshold current density diode lasers using InAs dots in In/sub 0.15/Ga/sub 0.85/As quantum well , 1999 .

[5]  D. J. Robbins,et al.  9.5 W CW output power from high brightness 980 nm InGaAs/AlGaAs tapered laser arrays , 1999 .

[6]  H. Qi,et al.  980-nm master oscillator power amplifiers with nonabsorbing mirrors , 1999, IEEE Photonics Technology Letters.

[7]  Nikolai N. Ledentsov,et al.  3.9 W CW power from sub-monolayer quantum dot diode laser , 1999 .

[8]  Johann Peter Reithmaier,et al.  Highly efficient GaInAs/(Al)GaAs quantum-dot lasers based on a single active layer versus 980 nm high-power quantum-well lasers , 2000 .

[9]  H. Ishikawa,et al.  1.3-/spl mu/m CW lasing characteristics of self-assembled InGaAs-GaAs quantum dots , 2000, IEEE Journal of Quantum Electronics.

[10]  Andreas Stintz,et al.  Low-threshold quantum dot lasers with 201 nm tuning range , 2000 .

[11]  Michel Calligaro,et al.  High-performance 980 nm quantum dot lasers for high-power applications , 2001 .

[12]  Johann Peter Reithmaier,et al.  Correlation between the gain profile and the temperature-induced shift in wavelength of quantum-dot lasers , 2002 .

[13]  Sophie-Charlotte Auzanneau,et al.  High-power and high-brightness laser diode structures using Al-free active region , 2003, SPIE OPTO.