Analysis of the acoustoelectric behavior of microwave frequency, temperature-compensated AlN-based multilayer coupling configurations
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[1] C. Caliendo. Analysis of dispersive electroacoustic coupling configurations for application to gigahertz-band, temperature-compensated AlN-based acoustic devices , 2008 .
[2] Cinzia Caliendo,et al. Theoretical and experimental investigation of gigahertz-band, temperature-compensated electromechanical coupling configurations based on AlN films , 2008 .
[3] Naoteru Shigekawa,et al. Temperature Dependence of Surface Acoustic Wave Characteristics of GaN Layers on Sapphire Substrates , 2005 .
[4] C. Caliendo,et al. Structural, optical, and acoustic characterization of high-quality AlN thick films sputtered on Al2O3(0001) at low temperature for GHz-band electroacoustic devices applications , 2004 .
[5] C. Caliendo. Gigahertz-band electroacoustic devices based on AlN thick films sputtered on Al2O3 at low temperature , 2003 .
[6] Hadis Morkoç,et al. Nitride Semiconductors and Devices , 1999 .
[7] N. Fujimori,et al. Theoretical study on SAW characteristics of layered structures including a diamond layer , 1995, IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control.
[8] G. Elko,et al. Principles of acoustic devices , 1985, Proceedings of the IEEE.
[9] K. Tsubouchi,et al. Zero-Temperature-Coefficient SAW Devices on AlN Epitaxial Films , 1985, IEEE Transactions on Sonics and Ultrasonics.
[10] G. Kino,et al. Theory of interdigital couplers on nonpiezoelectric substrates , 1973 .
[11] R. Bechmann,et al. Numerical data and functional relationships in science and technology , 1969 .
[12] Allan D. Pierce,et al. Physical acoustics : principles and methods , 1965 .