论文信息 - Interband cascade light emitting diodes in the 5–8 μm spectrum region

Interband cascade light emitting diodes in the 5–8 μm spectrum region

Interband cascade electroluminescence in the 5–8 μm spectrum region is observed from a staircase of Sb-based type-II quantum well structures. The structure was grown by molecular beam epitaxy on a GaSb substrate and comprises 15 periods of active regions separated by digitally graded multilayer injection regions. The device has been operated at 300 and 77 K with an output optical power up to 700 nW. The strong blue shift of the electroluminescent peak with the applied bias due to the Stark effect has also been observed.

[1] Rui Q. Yang,et al. Type-II and type-I interband cascade lasers , 1996 .

[2] Neil T. Gordon,et al. Uncooled InSb/In1−xAlxSb mid‐infrared emitter , 1994 .

[3] Rui Q. Yang. Infrared laser based on intersubband transitions in quantum wells , 1995 .

[4] Carlo Sirtori,et al. Mid‐infrared field‐tunable intersubband electroluminescence at room temperature by photon‐assisted tunneling in coupled‐quantum wells , 1994 .

[5] R. D. Hudson. Infrared System Engineering , 1969 .

[6] Xu,et al. Bound and quasibound states in leaky quantum wells. , 1992, Physical review. B, Condensed matter.

[7] Rui Q. Yang,et al. NOVEL TYPE-II QUANTUM CASCADE LASERS , 1996 .

[8] J. Faist,et al. High power mid‐infrared (λ∼5 μm) quantum cascade lasers operating above room temperature , 1996 .

[9] Christoph H. Grein,et al. Minority carrier lifetimes in ideal InGaSb/InAs superlattices , 1992 .

[10] Georgy G. Zegrya,et al. Mechanism of suppression of Auger recombination processes in type-II heterostructures , 1995 .

[11] Darryl L. Smith,et al. Proposal for strained type II superlattice infrared detectors , 1987 .