Capacitance investigation of Ge nanoclusters on a silicon (0 0 1) surface grown by MBE at low temperatures
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V. P. Kalinushkin | L. V. Arapkina | K. Chizh | V. Yuryev | V. A. Chapnin | E. Yakimov | O. V. Feklisova
[1] L. V. Arapkina,et al. Structure and peculiarities of the (8 × n)-type Si(001) surface prepared in a molecular-beam epitaxy chamber: A scanning tunneling microscopy study , 2008, 0908.1346.
[2] G. Abstreiter,et al. Capacitance–voltage and admittance spectroscopy of self-assembled Ge islands in Si , 2000 .
[3] G. Abstreiter,et al. SPACE-CHARGE SPECTROSCOPY OF SELF-ASSEMBLED GE-RICH DOTS ON SI GROWN BY MBE , 1999 .
[4] A. Suvorova,et al. Accumulation of electrons in GaAs layers grown at low temperatures and containing arsenic clusters , 1998 .
[5] Yu. G. Musikhin,et al. Electronic structure of self-assembled InAs quantum dots in GaAs matrix , 1998 .
[6] Xun Wang,et al. COULOMB CHARGING EFFECT IN SELF-ASSEMBLED GE QUANTUM DOTS STUDIED BY ADMITTANCE SPECTROSCOPY , 1998 .
[7] Peter Blood,et al. The Electrical Characterization of Semiconductors: Majority Carriers and Electron States , 1992 .
[8] Eaglesham,et al. Dislocation-free Stranski-Krastanow growth of Ge on Si(100). , 1990, Physical review letters.
[9] C. Kapteyn. Carrier Emission and Electronic Properties of Self-Organized Semiconductor Quantum Dots , 2001 .