Composition of self-assembled Ge/si islands in single and multiple layers

The degree of Si alloying in vertically aligned self-assembled Ge islands increases with the number of stacked layers. We find that the Si–Ge interdiffusion coefficient increases by more than two orders of magnitude for stacked hut clusters. Furthermore, we determine the composition profiles through the center of dome-shaped islands, capped with Si. These profiles exhibit a plateau near the base and a Ge enrichment near the apex of the islands. In this case, too, the upper dome island experiences a state of increased alloying with Si.

[1]  Oliver G. Schmidt,et al.  Multiple layers of self-asssembled Ge/Si islands: Photoluminescence, strain fields, material interdiffusion, and island formation , 2000 .

[2]  Gerhard Abstreiter,et al.  Structural and optical properties of vertically correlated Ge island layers grown at low temperatures , 2002 .

[3]  Oliver G. Schmidt,et al.  Modified Stranski–Krastanov growth in stacked layers of self-assembled islands , 1999 .

[4]  G. Capellini,et al.  SiGe intermixing in Ge/Si(100) islands , 2001 .

[5]  H. Maier,et al.  Strained state of Ge(Si) islands on Si: Finite element calculations and comparison to convergent beam electron‐diffraction measurements , 1994 .

[6]  Oliver G. Schmidt,et al.  Trench formation around and between self-assembled Ge islands on Si , 2001 .

[7]  Theodore I. Kamins,et al.  Deposition of three-dimensional Ge islands on Si(001) by chemical vapor deposition at atmospheric and reduced pressures , 1997 .

[8]  Savage,et al.  Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001). , 1990, Physical review letters.

[9]  H. Lüth,et al.  Formation of Heterogeneous Thickness Modulations During Epitaxial Growth of LPCVD-Si1−xGex/Si Quantum Well Structures , 1992 .

[10]  Xun Wang,et al.  Strain relaxation by alloying effects in Ge islands grown on Si(001) , 1999 .

[11]  David J. Smith,et al.  Strain-Driven Alloying in Ge/Si(100) Coherent Islands , 1999 .

[12]  Oliver G. Schmidt,et al.  Strain and composition distribution in uncapped SiGe islands from x-ray diffraction , 2001 .

[13]  B. Tuck,et al.  Introduction to diffusion in semiconductors , 1975, 1975 First European Solid State Circuits Conference (ESSCIRC).

[14]  Eaglesham,et al.  Dislocation-free Stranski-Krastanow growth of Ge on Si(100). , 1990, Physical review letters.

[15]  O. Schmidt,et al.  Strain and band-edge alignment in single and multiple layers of self-assembled Ge/Si and GeSi/Si islands , 2000 .

[16]  Oliver G. Schmidt,et al.  GERMANIUM QUANTUM DOTS EMBEDDED IN SILICON : QUANTITATIVE STUDY OF SELF-ALIGNMENT AND COARSENING , 1999 .