Porous Silicon: From Luminescence to LEDs

Silicon is at the heart of the microelectronics revolution. Its dominance over other semiconductors is intimately tied to its superior materials and processing properties and to the tremendous base of technology that has developed around it. Another semiconductor is not likely to displace silicon as the material of choice in electronic applications. Silicon, however, is an extremely inefficient light emitter, and for this reason has not enjoyed the same level of dominance in optical applications.

[1]  Volker Lehmann,et al.  Porous silicon formation: A quantum wire effect , 1991 .

[2]  Friedman,et al.  Dimensions of luminescent oxidized and porous silicon structures. , 1994, Physical review letters.

[3]  Read,et al.  First-principles calculations of the electronic properties of silicon quantum wires. , 1992, Physical review letters.

[4]  T. I. Cox,et al.  Electroluminescent porous silicon device with an external quantum efficiency greater than 0.1% under CW operation , 1995 .

[5]  L. Canham Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers , 1990 .

[6]  P. F. Szajowski,et al.  Quantum Confinement in Size-Selected, Surface-Oxidized Silicon Nanocrystals , 1993, Science.

[7]  P. Bressers,et al.  Visible light emission from a porous silicon/solution diode , 1992 .

[8]  Búda,et al.  Optical properties of porous silicon: A first-principles study. , 1992, Physical review letters.

[9]  B. Way,et al.  Evidence for quantum confinement in porous silicon from soft x‐ray absorption , 1992 .

[10]  A. Uhlir Electrolytic shaping of germanium and silicon , 1956 .

[11]  Muller,et al.  Mechanisms of visible-light emission from electro-oxidized porous silicon. , 1992, Physical review. B, Condensed matter.

[12]  Hybertsen,et al.  Absorption and emission of light in nanoscale silicon structures. , 1994, Physical review letters.

[13]  Allan,et al.  Theoretical aspects of the luminescence of porous silicon. , 1993, Physical review. B, Condensed matter.

[14]  L. Canham,et al.  Spectroscopic identification of the luminescence mechanism of highly porous silicon , 1993 .

[15]  R.T. Collins,et al.  Porous silicon sheds a new light on OEICs , 1993, IEEE Circuits and Devices Magazine.

[16]  Philippe M. Fauchet,et al.  Stable and efficient electroluminescence from a porous silicon‐based bipolar device , 1996 .

[17]  C. Pickering,et al.  Optical studies of the structure of porous silicon films formed in p-type degenerate and non-degenerate silicon , 1984 .

[18]  Confinement, surface, and chemisorption effects on the optical properties of Si quantum wires. , 1994, Physical review. B, Condensed matter.

[19]  A. Ogura,et al.  Raman spectra of size-selected silicon clusters and comparison with calculated structures , 1993, Nature.

[20]  K. D. Hirschman,et al.  Silicon-based visible light-emitting devices integrated into microelectronic circuits , 1996, Nature.

[21]  Nenad Lalic,et al.  High quantum efficiency for a porous silicon light emitting diode under pulsed operation , 1995 .