Temperature dependences of current gains in GaInP/GaAs and AlGaAs/GaAs heterojunction bipolar transistors

The temperature dependences of current gain are investigated for both GaInP/GaAs and AlGaAs/GaAs heterojunction bipolar transistors (HBTs). Measured results indicate that for GaInP/GaAs HBTs the current gain at collector current densities >0.1 A/cm/sup 2/ remains nearly constant, independent of the substrate temperature for AlGaAs/GaAs HBTs. These current gain characteristics are examined, and the origin of the difference is attributed to the difference of the valence-band discontinuities in the base-emitter heterojunctions of the two HBTs. >

[1]  Hao-Hsiung Lin,et al.  Super‐gain AlGaAs/GaAs heterojunction bipolar transistors using an emitter edge‐thinning design , 1985 .

[2]  H. Kroemer,et al.  Heterojunction bipolar transistor using a (Ga,In)P emitter on a GaAs base, grown by molecular beam epitaxy , 1985, IEEE Electron Device Letters.

[3]  T. Kim,et al.  12 W monolithic X-band HBT power amplifier , 1992, IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers.

[4]  S. Tiwari,et al.  Transport and related properties of (Ga, Al)As/GaAs double heterostructure bipolar junction transistors , 1987, IEEE Transactions on Electron Devices.

[5]  Osaake Nakajima,et al.  Emitter-Base Junction Size Effect on Current Gain Hfe of AlGaAs/GaAs Heterojunction Bipolar Transistors , 1985 .

[6]  James S. Harris,et al.  Diode ideality factor for surface recombination current in AlGaAs/GaAs heterojunction bipolar transistors , 1992 .

[7]  S. L. Wright,et al.  Energy band alignment in GaAs:(Al,Ga)As heterostructures: The dependence on alloy composition , 1986 .

[8]  W. Liu,et al.  Near-ideal I-V characteristics of GaInP/GaAs heterojunction bipolar transistors , 1992, IEEE Electron Device Letters.

[9]  H. Kawai,et al.  Band lineup for a GaInP/GaAs heterojunction measured by a high‐gain Npn heterojunction bipolar transistor grown by metalorganic chemical vapor deposition , 1989 .

[10]  J. Harris,et al.  Current gain of graded AlGaAs/GaAs heterojunction bipolar transistors with and without a base quasi-electric field , 1992 .

[11]  H. Kroemer,et al.  Heterostructure bipolar transistors and integrated circuits , 1982, Proceedings of the IEEE.

[12]  Wilfried Pletschen,et al.  GaAs bipolar transistors with a Ga/sub 0.5/In/sub 0.5/P hole barrier layer and carbon-doped base grown by MOVPE , 1992 .