A Low Power/Low Noise MMIC Amplifier for Phased-Array Applications using InAs/AlSb HEMT
暂无分享,去创建一个
A. Gutierrez | W.R. Deal | J. B. Boos | R. Tsai | M.D. Lange | J.B. Boos | B.R. Bennett | B. R. Bennett | W. Deal | M. Lange | R. Tsai | A. Gutierrez
[1] M. Rodwell,et al. An ultra-low power InAs/AlSb HEMT Ka-band low-noise amplifier , 2004, IEEE Microwave and Wireless Components Letters.
[2] C. Bolognesi. Antimonide-based high-speed electronics: a transistor perspective , 2002, Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307).
[3] Mario G. Ancona,et al. Antimonide-based compound semiconductors for electronic devices: A review , 2005 .
[4] S. Fiedler,et al. Geosynchronous space based radar concept development for theater surveillance , 1996, 1996 IEEE Aerospace Applications Conference. Proceedings.
[5] M. Inoue,et al. An InAs channel heterojunction field-effect transistor with high transconductance , 1990, IEEE Electron Device Letters.
[6] J. B. Boos,et al. A W-band InAs/AlSb low-noise/low-power amplifier , 2005, IEEE Microwave and Wireless Components Letters.
[7] M. Barsky,et al. Manufacturable AlSb / InAs HEMT Technology for Ultra-Low Power Millimeter-Wave Integrated Circuits , 2004 .