A Low Power/Low Noise MMIC Amplifier for Phased-Array Applications using InAs/AlSb HEMT

In this paper, we present a two-stage low-power/low-noise MMIC amplifier. At 10-GHz, the amplifier demonstrates high gain (~18-dB) and moderate noise figure (<1.8-dB) at a total DC power consumption of only 1.38-mW. The ultra-low power MMIC amplifier utilizes InAs/AlSb metamorphic HEMT technology, which enables a low-power/low-noise operating point of 0.15-V and 40-mA/mm for each gain stage, considerably lower than either InP or GaAs low-power bias points. The compact design (1.6times2.6-mm2) is realized in coplanar waveguide architecture (CPW), including CPW spiral inductors

[1]  M. Rodwell,et al.  An ultra-low power InAs/AlSb HEMT Ka-band low-noise amplifier , 2004, IEEE Microwave and Wireless Components Letters.

[2]  C. Bolognesi Antimonide-based high-speed electronics: a transistor perspective , 2002, Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307).

[3]  Mario G. Ancona,et al.  Antimonide-based compound semiconductors for electronic devices: A review , 2005 .

[4]  S. Fiedler,et al.  Geosynchronous space based radar concept development for theater surveillance , 1996, 1996 IEEE Aerospace Applications Conference. Proceedings.

[5]  M. Inoue,et al.  An InAs channel heterojunction field-effect transistor with high transconductance , 1990, IEEE Electron Device Letters.

[6]  J. B. Boos,et al.  A W-band InAs/AlSb low-noise/low-power amplifier , 2005, IEEE Microwave and Wireless Components Letters.

[7]  M. Barsky,et al.  Manufacturable AlSb / InAs HEMT Technology for Ultra-Low Power Millimeter-Wave Integrated Circuits , 2004 .