论文信息 - Radiative recombination in InP quantum dots on GaP

Radiative recombination in InP quantum dots on GaP

We describe the growth and optical emission from strained InP quantum dots grown on GaP using gas-source molecular beam epitaxy. Self-organised island formation takes place for InP coverage greater than 1.8 monolayers on the [100] GaP surface. Intense photoluminescence from the dots are observed at about 2.0 eV.

W. Masselink | F. Hatami | L. Schrottke

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