A new concept for front‐end circuit integration: From single‐ended antenna to differential‐input connection without any external balun
暂无分享,去创建一个
[1] Hsien-Ku Chen,et al. A 5.2‐GHz cascade‐mos 0.35‐μm BiCMOS technology ultra‐low‐power LNA using a novel floating‐body method , 2005 .
[2] J. Cressler. SiGe HBT technology: a new contender for Si-based RF and microwave circuit applications , 1998 .
[3] Xi Li,et al. A comparison of CMOS and SiGe LNA's and mixers for wireless LAN application , 2001, Proceedings of the IEEE 2001 Custom Integrated Circuits Conference (Cat. No.01CH37169).
[4] R. Gotzfried,et al. RFIC's for mobile communication systems using SiGe bipolar technology , 1998 .
[5] Lawrence E. Larson,et al. Silicon technology tradeoffs for radio-frequency/mixed-signal (quote)systems-on-a-chip(quote) , 2003 .
[6] J. Durec. An integrated silicon bipolar receiver subsystem for 900-MHz ISM band applications , 1997 .
[7] M. Recouly,et al. A dual-band 802.11a/b/g radio in 0.18 /spl mu/m CMOS , 2004, 2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519).
[8] M. Zargari,et al. A single-chip dual-band tri-mode CMOS transceiver for IEEE 802.11a/b/g WLAN , 2004, 2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519).
[9] Behzad Razavi. Challenges and trends in RF design , 1996, Proceedings Ninth Annual IEEE International ASIC Conference and Exhibit.