论文信息 - A new "mixed-mode" reliability degradation mechanism in advanced Si and SiGe bipolar transistors

A new "mixed-mode" reliability degradation mechanism in advanced Si and SiGe bipolar transistors

A new mixed-mode base current degradation mechanism is identified in bipolar transistors for the first time, which, at room temperature, induces a large I/sub B/ leakage current only after simultaneous application of both high J/sub C/ and high V/sub CB/. This new mechanism differs fundamentally from well-known I/sub B/ degradation mechanisms such as the reverse EB voltage stress, high forward current stress and damage due to ionizing radiation. Extensive measurements and two-dimensional (2-D) simulations have been used to help understand the device physics associated with this new degradation mechanism.

J. Cressler | G. Niu | A. Joseph | Gang Zhang

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