Memristive operation mode of floating gate transistors: A two-terminal MemFlash-cell

A memristive operation mode of a single floating gate transistor is presented. The device resistance varied accordingly to the charge flow through the device. Hysteretic current-voltages including a resistance storage capability were observed. These experimental findings are theoretically supported by a capacitive based model. The presented two-terminal MemFlash-cell can be considered as a potential substitute for any memristive device (especially for reconfigurable logic, cross-bar arrays, and neuromorphic circuits) and is basically compatible with current Si-fabrication technology. The obvious trade-off between a memristive device based on a state-of-the-art silicon process technology and power consumption concerns will be discussed.

[1]  Bernabé Linares-Barranco,et al.  On Spike-Timing-Dependent-Plasticity, Memristive Devices, and Building a Self-Learning Visual Cortex , 2011, Front. Neurosci..

[2]  M.H. Kryder,et al.  After Hard Drives—What Comes Next? , 2009, IEEE Transactions on Magnetics.

[3]  L. Chua.  Memristor-The missing circuit element , 1971 .

[4]  D. Stewart,et al.  The missing memristor found , 2008, Nature.

[5]  R. Waser,et al.  Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3 , 2006, Nature materials.

[6]  Konstantin K. Likharev,et al.  Layered tunnel barriers for nonvolatile memory devices , 1998 .

[7]  G. Eisenstein,et al.  Nonvolatile low-voltage memory transistor based on SiO2 tunneling and HfO2 blocking layers with charge storage in Au nanocrystals , 2011 .

[8]  Giacomo Indiveri,et al.  Artificial Cognitive Systems: From VLSI Networks of Spiking Neurons to Neuromorphic Cognition , 2009, Cognitive Computation.

[9]  Leon O. Chua.  Resistance switching memories are memristors , 2011 .

[10]  R. Dittmann,et al.  Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges , 2009, Advanced materials.

[11]  M. Ziegler,et al.  An Electronic Version of Pavlov's Dog , 2012 .

[12]  Paul E. Hasler,et al.  Floating Gate Synapses With Spike-Time-Dependent Plasticity , 2011, IEEE Transactions on Biomedical Circuits and Systems.

[13]  Harry J.M. Veendrick,et al.  Nanometer CMOS ICs , 2008 .

[14]  Konstantin K. Likharev,et al.  CrossNets: Neuromorphic Hybrid CMOS/Nanoelectronic Networks , 2011 .

[15]  Wei Yang Lu,et al.  Nanoscale memristor device as synapse in neuromorphic systems. , 2010, Nano letters.

[16]  Hiromi Yamauchi,et al.  Invited) FinFET Flash Memory Technology , 2012 .

[17]  R. Waser,et al.  Nanoionics-based resistive switching memories. , 2007, Nature materials.

[18]  Hideto Hidaka.  Embedded Flash Memory , 2009 .

[19]  D. Morgan,et al.  Electrical phenomena in amorphous oxide films , 1970 .

[20]  T. Hasegawa,et al.  Short-term plasticity and long-term potentiation mimicked in single inorganic synapses. , 2011, Nature materials.

[21]  T. Mikolajick.  Flash‐Type Memories , 2010 .

[22]  S. Ha,et al.  Adaptive oxide electronics: A review , 2011 .

[23]  C. Gerber,et al.  Reproducible switching effect in thin oxide films for memory applications , 2000 .

[24]  Giacomo Indiveri,et al.  A Systematic Method for Configuring VLSI Networks of Spiking Neurons , 2011, Neural Computation.

[25]  M. Shur,et al.  Threshold voltage modeling and the subthreshold regime of operation of short-channel MOSFETs , 1993 .

[26]  T. W. Hickmott.  LOW-FREQUENCY NEGATIVE RESISTANCE IN THIN ANODIC OXIDE FILMS , 1962 .

[27]  D. Strukov,et al.  Resistive switching phenomena in thin films: Materials, devices, and applications , 2012 .

[28]  Michael Kund,et al.  Nonvolatile Memory Concepts Based on Resistive Switching in Inorganic Materials , 2009 .

[29]  R. Douglas,et al.  A silicon neuron , 1991, Nature.