384 nm laser diode grown on a (202¯1) semipolar relaxed AlGaN buffer layer
暂无分享,去创建一个
S. Denbaars | S. Nakamura | R. Chung | K. Fujito | J. Speck | Feng Wu | N. Pfaff | E. Young | D. Haeger | D. Cohen | M. Tsai
[1] S. Denbaars,et al. 444.9 nm semipolar (112¯2) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer , 2012 .
[2] S. Denbaars,et al. Observation of non-basal slip in semipolar InxGa1-xN/GaN heterostructures , 2011 .
[3] James S. Speck,et al. Determination of internal parameters for AlGaN-cladding-free m-plane InGaN/GaN laser diodes , 2011 .
[4] Rajaram Bhat,et al. 60 mW Pulsed and Continuous Wave Operation of GaN-Based Semipolar Green Laser with Characteristic Temperature of 190 K , 2011 .
[5] S. Denbaars,et al. Misfit dislocation formation via pre-existing threading dislocation glide in (112¯2) semipolar heteroepitaxy , 2011 .
[6] Hongen Shen,et al. Pseudomorphically Grown Ultraviolet C Photopumped Lasers on Bulk AlN Substrates , 2011 .
[7] S. Denbaars,et al. Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy , 2011 .
[8] J. Speck,et al. Determination of Composition and Lattice Relaxation in Semipolar Ternary (In,Al,Ga)N Strained Layers from Symmetric X-ray Diffraction Measurements , 2011 .
[9] James S. Speck,et al. AlGaN-Cladding-Free Nonpolar InGaN/GaN Laser Diodes , 2007, 69th Device Research Conference.
[10] Mathew C. Schmidt,et al. High-Efficiency Blue and True-Green-Emitting Laser Diodes Based on Non-c-Plane Oriented GaN Substrates , 2010 .
[11] A. Tyagi,et al. Critical Thickness for Onset of Plastic Relaxation in (1122) and (2021) Semipolar AlGaN Heterostructures , 2010 .
[12] James S. Speck,et al. Low-threshold-current-density AlGaN-cladding-free m-plane InGaN/GaN laser diodes , 2010 .
[13] Anurag Tyagi,et al. Lattice Tilt and Misfit Dislocations in (1122) Semipolar GaN Heteroepitaxy , 2010 .
[14] S. Denbaars,et al. Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al,In)GaN epitaxial layers grown on semipolar (112¯2) GaN free standing substrates , 2009 .
[15] Balaji Raghothamachar,et al. Seeded growth of AlN bulk crystals in m- and c-orientation , 2009 .
[16] Hirofumi Kan,et al. AlGaN-based laser diodes for the short-wavelength ultraviolet region , 2009 .
[17] Michael Kneissl,et al. Ultraviolet laser diodes on sapphire and AlN substrates , 2009, OPTO.
[18] S. Denbaars,et al. AlGaN-Cladding Free Green Semipolar GaN Based Laser Diode with a Lasing Wavelength of 506.4 nm , 2009 .
[19] Hirofumi Kan,et al. A 342-nm ultraviolet AlGaN multiple-quantum-well laser diode , 2008 .
[20] H. Ryu,et al. Determination of internal parameters in blue InGaN laser diodes by the measurement of cavity-length dependent characteristics , 2008 .
[21] Zhihong Yang,et al. Ultraviolet semiconductor laser diodes on bulk AlN , 2007 .
[22] Takashi Mukai,et al. 365 nm Ultraviolet Laser Diodes Composed of Quaternary AlInGaN Alloy , 2003 .
[23] K. E. Morgan,et al. Fabrication of native, single‐crystal AlN substrates , 2003 .