Row decorder of flash memory and erasing method of flash memory cell using the same

PURPOSE: A row decoder of a flash memory and an erase method of a flash memory using the same are provided to apply a ground voltage to a word line connected to a cell with a fail bit and to apply an erase voltage to a word line connected to a cell without a fail bit. CONSTITUTION: A PMOS transistor receives the first input signal as a gate electrode input and is connected between the first power supply port and the first node. The first NMOS transistor(NT1) receives the first input signal as a gate electrode input and is connected between the first node(N1) and the second node(N2). The second NMOS transistor(NT2) receives the second input signal as a gate electrode input and is connected between the second node and a ground port. And a switching unit(NT3) receives the third input signal as a gate electrode input and is connected between the second node and the second power supply port. And the first node is connected to a word line.