Potassium and ion beam induced electron accumulation in InN

[1]  S. Krischok,et al.  Reduction of electron accumulation at InN(0001) surfaces via saturation of surface states by potassium and oxygen as donor- or acceptor-type adsorbates , 2014 .

[2]  O. Brandt,et al.  Observation of the electron-accumulation layer at the surface of InN by cross-sectional micro-Raman spectroscopy , 2013 .

[3]  S. M. Durbin,et al.  Giant reduction of InN surface electron accumulation: compensation of surface donors by Mg dopants. , 2012, Physical review letters.

[4]  Hong Guo,et al.  Tuning the surface charge properties of epitaxial InN nanowires. , 2012, Nano letters.

[5]  Jan Kuzmik,et al.  N-Polarity InN/GaN/InAlN High-Electron-Mobility Transistors , 2012 .

[6]  M. Goiran,et al.  Determination of effective mass in InN by high-field oscillatory magnetoabsorption spectroscopy , 2011 .

[7]  Shih-Chieh Lin,et al.  Is electron accumulation universal at InN polar surfaces , 2011 .

[8]  M. Goiran,et al.  Electron cyclotron effective mass in indium nitride , 2010 .

[9]  T. Nagata,et al.  Surface structure and chemical states of a-plane and c-plane InN films , 2009 .

[10]  A. Cantarero,et al.  Optical studies of MBE-grown InN nanocolumns: Evidence of surface electron accumulation , 2009 .

[11]  W. Schaff,et al.  Free electron behavior in InN: On the role of dislocations and surface electron accumulation , 2009 .

[12]  S. Gwo,et al.  Absence of Fermi-level pinning at cleaved nonpolar InN surfaces. , 2008, Physical review letters.

[13]  T. Moustakas,et al.  Observation of an inverted band structure near the surface of InN , 2008 .

[14]  J. Andrew Yeh,et al.  InN-based anion selective sensors in aqueous solutions , 2007 .

[15]  N. Dietz,et al.  Carrier concentration and surface electron accumulation in indium nitride layers grown by high pressure chemical vapor deposition , 2007 .

[16]  O. Ambacher,et al.  Effect of surface oxidation on electron transport in InN thin films , 2007 .

[17]  Chris G. Van de Walle,et al.  Microscopic origins of surface states on nitride surfaces , 2007 .

[18]  O. Ambacher,et al.  Reduced surface electron accumulation at InN films by ozone induced oxidation , 2007 .

[19]  P. H. Jefferson,et al.  Quantized electron accumulation states in indium nitride studied by angle-resolved photoemission spectroscopy. , 2006, Physical review letters.

[20]  D. Srolovitz,et al.  First-principles study of wurtzite InN (0001) and (0001) surfaces , 2006, cond-mat/0609563.

[21]  H. Lüth,et al.  Photoluminescence and intrinsic properties of MBE-grown InN nanowires. , 2006, Nano letters.

[22]  S. Gwo,et al.  Near-infrared photoluminescence from vertical InN nanorod arrays grown on silicon: Effects of surface electron accumulation layer , 2006 .

[23]  W. Schaff,et al.  InN: Fermi level stabilization by low‐energy ion bombardment , 2006 .

[24]  T. Moustakas,et al.  Growth of InN films by RF plasma-assisted MBE and cluster beam epitaxy , 2006 .

[25]  Hung-Ta Wang,et al.  Pt-coated InN nanorods for selective detection of hydrogen at room temperature , 2005 .

[26]  Friedhelm Bechstedt,et al.  Origin of electron accumulation at wurtzite InN surfaces , 2004 .

[27]  M. Betti,et al.  Self-assembling of potassium nanostructures on InAs(1 1 0) surface , 2003 .

[28]  Ying-Huang Lai and,et al.  Sputtering and etching of GaN surfaces , 2001 .

[29]  A. Abramo,et al.  Density of states of a two-dimensional electron gas at semiconductor surfaces , 2001 .

[30]  C. Mariani A high-resolution photoemission study of confined metal systems on InAs(110) , 2000 .

[31]  A. Taleb-Ibrahimi,et al.  Direct measurement of quantum-state dispersion in an accumulation layer at a semiconductor surface , 1999 .

[32]  A. Abramo,et al.  Density of states of a two-dimensional electron gas measured by high-resolution photoelectron spectroscopy , 1999 .

[33]  A. Taleb-Ibrahimi,et al.  Sb or Cs covered InAs(110) surfaces : Moving eF into conduction band and quantized 2D electron channel , 1996 .

[34]  Soukiassian,et al.  Schottky-barrier and interface formation of Cs/GaSb(110) and Rb/GaSb(110) at room temperature. , 1994, Physical review. B, Condensed matter.

[35]  M. Hecht Photovoltaic effects in photoemission studies of Schottky barrier formation , 1990 .