Interface properties of NO-annealed N/sub 2/O-grown oxynitride

The oxide/Si interface properties of gate dielectric prepared by annealing N/sub 2/O-grown oxide in an NO ambient are intensively investigated and compared to those of O/sub 2/-grown oxide with the same annealing conditions. Hot-carrier stressings show that the former has a harder oxide/Si interface and near-interface oxide than the latter. As confirmed by SIMS analysis, this is associated with a higher nitrogen peak concentration near the oxide/Si interface and a larger total nitrogen content in the former, both arising from the initial oxidation in N/sub 2/O instead of O/sub 2/.

[1]  Y.C. Cheng,et al.  Effects of N/sub 2/O anneal and reoxidation on thermal oxide characteristics , 1992, IEEE Electron Device Letters.

[2]  B. Riccò,et al.  High-field-induced degradation in ultra-thin SiO/sub 2/ films , 1988 .

[3]  P. Pan.  Characteristics of thermal SiO2 films during nitridation , 1987 .

[4]  J. Kim,et al.  MOS characteristics of ultrathin NO-grown oxynitrides , 1994, IEEE Electron Device Letters.

[5]  C. Hu,et al.  Stress-induced current in thin silicon dioxide films , 1992, 1992 International Technical Digest on Electron Devices Meeting.

[6]  Hiroshi Iwasaki,et al.  Electrical and physical properties of ultrathin reoxidized nitrided oxides prepared by rapid thermal processing , 1989 .

[7]  H. B. Harrison,et al.  High quality ultrathin dielectric films grown on silicon in a nitric oxide ambient , 1994 .

[8]  A. Chou,et al.  Leakage current, reliability characteristics, and boron penetration of ultra-thin (32-36 /spl Aring/) O/sub 2/-oxides and N/sub 2/O/NO oxynitrides , 1996, International Electron Devices Meeting. Technical Digest.

[9]  David Z. Ting,et al.  Large peak current densities in novel resonant interband tunneling heterostructures , 1990 .

[10]  Nelson S. Saks,et al.  Nitrogen depletion during oxidation in N2O , 1995 .

[11]  R. Hegde,et al.  Relationship between growth conditions, nitrogen profile, and charge to breakdown of gate oxynitrides grown from pure N2O , 1993 .

[12]  M. Wada,et al.  Stress induced leakage current limiting to scale down EEPROM tunnel oxide thickness , 1988, Technical Digest., International Electron Devices Meeting.

[13]  T. Hori,et al.  Compositional study of ultrathin rapidly reoxidized nitrided oxides , 1989 .

[14]  Takashi Hori.  Nitrided gate-oxide CMOS technology for improved hot-carrier reliability , 1993 .

[15]  H. B. Harrison,et al.  The electrical properties of sub-5-nm oxynitride dielectrics prepared in a nitric oxide ambient using rapid thermal processing , 1994, IEEE Electron Device Letters.

[16]  S. Dimitrijev,et al.  Effects of nitric oxide annealing of thermally grown silicon dioxide characteristics , 1995, IEEE Electron Device Letters.

[17]  W. Ting,et al.  Furnace nitridation of thermal SiO/sub 2/ in pure N/sub 2/O ambient for ULSI MOS applications , 1992, IEEE Electron Device Letters.

[18]  D. Kwong,et al.  MOS characteristics of NH/sub 3/-nitrided N/sub 2/O-grown oxides , 1993, IEEE Electron Device Letters.

[19]  D. Kwong,et al.  Highly suppressed boron penetration in NO-nitrided SiO/sub 2/ for p/sup +/-polysilicon gated MOS device applications , 1995, IEEE Electron Device Letters.

[20]  Sergio A. Ajuria,et al.  Furnace grown gate oxynitride using nitric oxide (NO) , 1994 .

[21]  H. Fukuda,et al.  Novel N/sub 2/O-oxynitridation technology for forming highly reliable EEPROM tunnel oxide films , 1991, IEEE Electron Device Letters.