Field‐effect transistors using alkyl substituted oligothiophenes

Field‐effect transistors (FETs) have been prepared using thin films of alkyl substituted oligothiophenes. These compounds bring about a significant increase in the source‐drain channel current when compared to the conventional nonsubstituted oligothiophenes. The increased channel current mostly results from the enhanced carrier mobility of the material. We report that the FETs are readily made by a single routine process of casting or evaporation.

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