Characteristics of NBTI in Multi-gate FETs for Highly Scaled CMOS Technology

The multi-gate devices have been paid much attention nowadays. The multi-gate FinFET has been used in manufacturing recently, and the gate-all-around (GAA) silicon nanowire transistor (SNWT) is a promising device structure for ultimate CMOS applications near the end of the technology roadmap. This chapter briefly reviews the reliability of multi-gate FETs, with focuses on the negative bias temperature instability (NBTI) behavior in GAA SNWTs, which exhibits some new characteristics due to its unique structural nature of quasi-1D channel and 3D surrounding gate.

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